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Carbon-Related Defects as a Source for the Enhancement of Yellow Luminescence of Unintentionally Doped GaN
Feng Liang ;   Degang Zhao ;   Desheng Jiang ;   Zongshun Liu ;   Jianjun Zhu ;   Ping Chen ;   Jing Yang ;   Shuangtao Liu ;   Yao Xing ;   Liqun Zhang ;   Mo Li ;   Yuantao Zhang;   Guotong Du
2018
Source PublicationNanomaterials (Basel, Switzerland)
Volume8Pages:744
Indexed BySCI
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/29322
Collection光电子研究发展中心
Recommended Citation
GB/T 7714
Feng Liang ; Degang Zhao ; Desheng Jiang ; Zongshun Liu ; Jianjun Zhu ; Ping Chen ; Jing Yang ; Shuangtao Liu ; Yao Xing ; Liqun Zhang ; Mo Li ; Yuantao Zhang; Guotong Du. Carbon-Related Defects as a Source for the Enhancement of Yellow Luminescence of Unintentionally Doped GaN[J]. Nanomaterials (Basel, Switzerland),2018,8:744.
APA Feng Liang ; Degang Zhao ; Desheng Jiang ; Zongshun Liu ; Jianjun Zhu ; Ping Chen ; Jing Yang ; Shuangtao Liu ; Yao Xing ; Liqun Zhang ; Mo Li ; Yuantao Zhang; Guotong Du.(2018).Carbon-Related Defects as a Source for the Enhancement of Yellow Luminescence of Unintentionally Doped GaN.Nanomaterials (Basel, Switzerland),8,744.
MLA Feng Liang ; Degang Zhao ; Desheng Jiang ; Zongshun Liu ; Jianjun Zhu ; Ping Chen ; Jing Yang ; Shuangtao Liu ; Yao Xing ; Liqun Zhang ; Mo Li ; Yuantao Zhang; Guotong Du."Carbon-Related Defects as a Source for the Enhancement of Yellow Luminescence of Unintentionally Doped GaN".Nanomaterials (Basel, Switzerland) 8(2018):744.
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梁锋 2018 nanomaterial(1799KB)期刊论文作者接受稿限制开放CC BY-NC-SAApplication Full Text
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