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Growth of high-Sn content (28%) GeSn alloy films by sputtering epitaxy
Jun Zheng;  Zhi Liu;  Yongwang Zhang;  Yuhua Zuo;  Chuanbo Li;  Chunlai Xue;  Buwen Cheng;  Qiming Wang
2018
Source PublicationJournal of Crystal Growth
Volume492Pages:29-34
Indexed BySCI
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/29297
Collection光电子研究发展中心
Recommended Citation
GB/T 7714
Jun Zheng;Zhi Liu;Yongwang Zhang;Yuhua Zuo;Chuanbo Li;Chunlai Xue;Buwen Cheng;Qiming Wang. Growth of high-Sn content (28%) GeSn alloy films by sputtering epitaxy[J]. Journal of Crystal Growth,2018,492:29-34.
APA Jun Zheng;Zhi Liu;Yongwang Zhang;Yuhua Zuo;Chuanbo Li;Chunlai Xue;Buwen Cheng;Qiming Wang.(2018).Growth of high-Sn content (28%) GeSn alloy films by sputtering epitaxy.Journal of Crystal Growth,492,29-34.
MLA Jun Zheng;Zhi Liu;Yongwang Zhang;Yuhua Zuo;Chuanbo Li;Chunlai Xue;Buwen Cheng;Qiming Wang."Growth of high-Sn content (28%) GeSn alloy films by sputtering epitaxy".Journal of Crystal Growth 492(2018):29-34.
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