SEMI OpenIR  > 半导体超晶格国家重点实验室
Type-I Transition Metal Dichalcogenides Lateral Homojunctions: Layer Thickness and External Electric Field Effects
Congxin Xia;   Wenqi Xiong;   Juan Du;   Tianxing Wang;   Yuting Peng;   Zhongming Wei;   Jingbo Li;   Yu Jia
2018
Source PublicationSmall
Volume14Pages:1800365
Indexed BySCI
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/29256
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
Congxin Xia; Wenqi Xiong; Juan Du; Tianxing Wang; Yuting Peng; Zhongming Wei; Jingbo Li; Yu Jia. Type-I Transition Metal Dichalcogenides Lateral Homojunctions: Layer Thickness and External Electric Field Effects[J]. Small,2018,14:1800365.
APA Congxin Xia; Wenqi Xiong; Juan Du; Tianxing Wang; Yuting Peng; Zhongming Wei; Jingbo Li; Yu Jia.(2018).Type-I Transition Metal Dichalcogenides Lateral Homojunctions: Layer Thickness and External Electric Field Effects.Small,14,1800365.
MLA Congxin Xia; Wenqi Xiong; Juan Du; Tianxing Wang; Yuting Peng; Zhongming Wei; Jingbo Li; Yu Jia."Type-I Transition Metal Dichalcogenides Lateral Homojunctions: Layer Thickness and External Electric Field Effects".Small 14(2018):1800365.
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