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Tunneling Anisotropic Magnetoresistance in L 1 0 - MnGa Based Antiferromagnetic Perpendicular Tunnel Junction
Xu-Peng Zhao;  Da-Hai Wei;  Jun Lu;  Si-Wei Mao;  Yu Zhi-Feng;  Jian-Hua Zhao
2018
Source PublicationChinese Physics Letters
Volume35Issue:8Pages:087501
Indexed BySCI
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/29255
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
Xu-Peng Zhao;Da-Hai Wei;Jun Lu;Si-Wei Mao;Yu Zhi-Feng;Jian-Hua Zhao. Tunneling Anisotropic Magnetoresistance in L 1 0 - MnGa Based Antiferromagnetic Perpendicular Tunnel Junction[J]. Chinese Physics Letters,2018,35(8):087501.
APA Xu-Peng Zhao;Da-Hai Wei;Jun Lu;Si-Wei Mao;Yu Zhi-Feng;Jian-Hua Zhao.(2018).Tunneling Anisotropic Magnetoresistance in L 1 0 - MnGa Based Antiferromagnetic Perpendicular Tunnel Junction.Chinese Physics Letters,35(8),087501.
MLA Xu-Peng Zhao;Da-Hai Wei;Jun Lu;Si-Wei Mao;Yu Zhi-Feng;Jian-Hua Zhao."Tunneling Anisotropic Magnetoresistance in L 1 0 - MnGa Based Antiferromagnetic Perpendicular Tunnel Junction".Chinese Physics Letters 35.8(2018):087501.
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