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	Spontaneous perpendicular exchange bias effect in L1 0 -MnGa/FeMn bilayers grown by molecular-beam epitaxy
	X. P. Zhao;   J. Lu;   S. W. Mao;   Z. F. Yu;   D. H. Wei;   J. H. Zhao
	2018
Source Publication	APPLIED PHYSICS LETTERS
Volume	112Issue:4Pages:042403
Indexed By	SCI
Document Type	期刊论文
Identifier	http://ir.semi.ac.cn/handle/172111/29254
Collection	半导体超晶格国家重点实验室
Recommended Citation GB/T 7714	X. P. Zhao; J. Lu; S. W. Mao; Z. F. Yu; D. H. Wei; J. H. Zhao. Spontaneous perpendicular exchange bias effect in L1 0 -MnGa/FeMn bilayers grown by molecular-beam epitaxy[J]. APPLIED PHYSICS LETTERS,2018,112(4):042403.
APA	X. P. Zhao; J. Lu; S. W. Mao; Z. F. Yu; D. H. Wei; J. H. Zhao.(2018).Spontaneous perpendicular exchange bias effect in L1 0 -MnGa/FeMn bilayers grown by molecular-beam epitaxy.APPLIED PHYSICS LETTERS,112(4),042403.
MLA	X. P. Zhao; J. Lu; S. W. Mao; Z. F. Yu; D. H. Wei; J. H. Zhao."Spontaneous perpendicular exchange bias effect in L1 0 -MnGa/FeMn bilayers grown by molecular-beam epitaxy".APPLIED PHYSICS LETTERS 112.4(2018):042403.

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Spontaneous perpendi（925KB）	期刊论文	作者接受稿	限制开放	CC BY-NC-SA	Application Full Text

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