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Spontaneous perpendicular exchange bias effect in L1 0 -MnGa/FeMn bilayers grown by molecular-beam epitaxy | |
X. P. Zhao; J. Lu; S. W. Mao; Z. F. Yu; D. H. Wei; J. H. Zhao | |
2018 | |
Source Publication | APPLIED PHYSICS LETTERS
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Volume | 112Issue:4Pages:042403 |
Indexed By | SCI |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/29254 |
Collection | 半导体超晶格国家重点实验室 |
Recommended Citation GB/T 7714 | X. P. Zhao; J. Lu; S. W. Mao; Z. F. Yu; D. H. Wei; J. H. Zhao. Spontaneous perpendicular exchange bias effect in L1 0 -MnGa/FeMn bilayers grown by molecular-beam epitaxy[J]. APPLIED PHYSICS LETTERS,2018,112(4):042403. |
APA | X. P. Zhao; J. Lu; S. W. Mao; Z. F. Yu; D. H. Wei; J. H. Zhao.(2018).Spontaneous perpendicular exchange bias effect in L1 0 -MnGa/FeMn bilayers grown by molecular-beam epitaxy.APPLIED PHYSICS LETTERS,112(4),042403. |
MLA | X. P. Zhao; J. Lu; S. W. Mao; Z. F. Yu; D. H. Wei; J. H. Zhao."Spontaneous perpendicular exchange bias effect in L1 0 -MnGa/FeMn bilayers grown by molecular-beam epitaxy".APPLIED PHYSICS LETTERS 112.4(2018):042403. |
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File Name/Size | DocType | Version | Access | License | ||
Spontaneous perpendi(925KB) | 期刊论文 | 作者接受稿 | 限制开放 | CC BY-NC-SA | Application Full Text |
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