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Spontaneous perpendicular exchange bias effect in L1 0 -MnGa/FeMn bilayers grown by molecular-beam epitaxy
X. P. Zhao;   J. Lu;   S. W. Mao;   Z. F. Yu;   D. H. Wei;   J. H. Zhao
2018
Source PublicationAPPLIED PHYSICS LETTERS
Volume112Issue:4Pages:042403
Indexed BySCI
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/29254
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
X. P. Zhao; J. Lu; S. W. Mao; Z. F. Yu; D. H. Wei; J. H. Zhao. Spontaneous perpendicular exchange bias effect in L1 0 -MnGa/FeMn bilayers grown by molecular-beam epitaxy[J]. APPLIED PHYSICS LETTERS,2018,112(4):042403.
APA X. P. Zhao; J. Lu; S. W. Mao; Z. F. Yu; D. H. Wei; J. H. Zhao.(2018).Spontaneous perpendicular exchange bias effect in L1 0 -MnGa/FeMn bilayers grown by molecular-beam epitaxy.APPLIED PHYSICS LETTERS,112(4),042403.
MLA X. P. Zhao; J. Lu; S. W. Mao; Z. F. Yu; D. H. Wei; J. H. Zhao."Spontaneous perpendicular exchange bias effect in L1 0 -MnGa/FeMn bilayers grown by molecular-beam epitaxy".APPLIED PHYSICS LETTERS 112.4(2018):042403.
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