Knowledge Management System Of Institute of Semiconductors,CAS
Robust electronic and mechanical properties to layer number in 2D wide-gap X(OH) 2 (X = Mg, Ca) | |
Congxin Xia; Wenqi Xiong; Juan Du; Tianxing Wang; Zhongming Wei; Jingbo Li | |
2018 | |
Source Publication | JOURNAL OF PHYSICS D-APPLIED PHYSICS
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Volume | 51Issue:1Pages:015107 |
Indexed By | SCI |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/29253 |
Collection | 半导体超晶格国家重点实验室 |
Recommended Citation GB/T 7714 | Congxin Xia;Wenqi Xiong;Juan Du;Tianxing Wang;Zhongming Wei;Jingbo Li. Robust electronic and mechanical properties to layer number in 2D wide-gap X(OH) 2 (X = Mg, Ca)[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS,2018,51(1):015107. |
APA | Congxin Xia;Wenqi Xiong;Juan Du;Tianxing Wang;Zhongming Wei;Jingbo Li.(2018).Robust electronic and mechanical properties to layer number in 2D wide-gap X(OH) 2 (X = Mg, Ca).JOURNAL OF PHYSICS D-APPLIED PHYSICS,51(1),015107. |
MLA | Congxin Xia;Wenqi Xiong;Juan Du;Tianxing Wang;Zhongming Wei;Jingbo Li."Robust electronic and mechanical properties to layer number in 2D wide-gap X(OH) 2 (X = Mg, Ca)".JOURNAL OF PHYSICS D-APPLIED PHYSICS 51.1(2018):015107. |
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File Name/Size | DocType | Version | Access | License | ||
Robust electronic an(631KB) | 期刊论文 | 作者接受稿 | 限制开放 | CC BY-NC-SA | Application Full Text |
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