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Atomic defects in monolayer WSe 2 tunneling FETs studied by systematic ab initio calculations
Jixuan Wu ;  Zhiqiang Fan ;   Jiezhi Chen;   Xiangwei Jiang
2018
Source PublicationAPPLIED PHYSICS EXPRESS
Volume11Issue:5Pages:054001
Indexed BySCI
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/29246
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
Jixuan Wu ;Zhiqiang Fan ; Jiezhi Chen; Xiangwei Jiang. Atomic defects in monolayer WSe 2 tunneling FETs studied by systematic ab initio calculations[J]. APPLIED PHYSICS EXPRESS,2018,11(5):054001.
APA Jixuan Wu ;Zhiqiang Fan ; Jiezhi Chen; Xiangwei Jiang.(2018).Atomic defects in monolayer WSe 2 tunneling FETs studied by systematic ab initio calculations.APPLIED PHYSICS EXPRESS,11(5),054001.
MLA Jixuan Wu ;Zhiqiang Fan ; Jiezhi Chen; Xiangwei Jiang."Atomic defects in monolayer WSe 2 tunneling FETs studied by systematic ab initio calculations".APPLIED PHYSICS EXPRESS 11.5(2018):054001.
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