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Tunable electric properties of bilayer InSe with different interlayer distances and external electric field
Jimin Shang;  Longfei Pan;  Xiaoting Wang;  Jingbo Li;  Zhongming Wei
2018
Source PublicationSemiconductor Science and Technology
Volume33Issue:3Pages:034002
Indexed BySCI
Language英语
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/29207
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
Jimin Shang;Longfei Pan;Xiaoting Wang;Jingbo Li;Zhongming Wei. Tunable electric properties of bilayer InSe with different interlayer distances and external electric field[J]. Semiconductor Science and Technology,2018,33(3):034002.
APA Jimin Shang;Longfei Pan;Xiaoting Wang;Jingbo Li;Zhongming Wei.(2018).Tunable electric properties of bilayer InSe with different interlayer distances and external electric field.Semiconductor Science and Technology,33(3),034002.
MLA Jimin Shang;Longfei Pan;Xiaoting Wang;Jingbo Li;Zhongming Wei."Tunable electric properties of bilayer InSe with different interlayer distances and external electric field".Semiconductor Science and Technology 33.3(2018):034002.
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