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Suppressing the excess OFF-state current of short-channel InAs nanowire field-effect transistors by nanoscale partial-gate
Wenyuan Yang ;   Dong Pan ;   Rui Shen ;   Xinzhe Wang ;   Jianhua Zhao ;   Qing Chen
2018
Source PublicationNANOTECHNOLOGY
Volume29Issue:41Pages:415203
Indexed BySCI
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/29206
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
Wenyuan Yang ; Dong Pan ; Rui Shen ; Xinzhe Wang ; Jianhua Zhao ; Qing Chen. Suppressing the excess OFF-state current of short-channel InAs nanowire field-effect transistors by nanoscale partial-gate[J]. NANOTECHNOLOGY,2018,29(41):415203.
APA Wenyuan Yang ; Dong Pan ; Rui Shen ; Xinzhe Wang ; Jianhua Zhao ; Qing Chen.(2018).Suppressing the excess OFF-state current of short-channel InAs nanowire field-effect transistors by nanoscale partial-gate.NANOTECHNOLOGY,29(41),415203.
MLA Wenyuan Yang ; Dong Pan ; Rui Shen ; Xinzhe Wang ; Jianhua Zhao ; Qing Chen."Suppressing the excess OFF-state current of short-channel InAs nanowire field-effect transistors by nanoscale partial-gate".NANOTECHNOLOGY 29.41(2018):415203.
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