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Large tunneling magnetoresistance in magnetic tunneling junctions based on two-dimensional CrX 3 (X = Br, I) monolayers
Longfei Pan;   Le Huang;   Mianzeng Zhong;   Xiang-Wei Jiang;   Hui-Xiong Deng;   Jingbo Li;   Jian-Bai Xia ;   Zhongming Wei
2018
Source PublicationNANOSCALE
Volume10Issue:47Pages:22196-22202
Indexed BySCI
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/29204
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
Longfei Pan; Le Huang; Mianzeng Zhong; Xiang-Wei Jiang; Hui-Xiong Deng; Jingbo Li; Jian-Bai Xia ; Zhongming Wei. Large tunneling magnetoresistance in magnetic tunneling junctions based on two-dimensional CrX 3 (X = Br, I) monolayers[J]. NANOSCALE,2018,10(47):22196-22202.
APA Longfei Pan; Le Huang; Mianzeng Zhong; Xiang-Wei Jiang; Hui-Xiong Deng; Jingbo Li; Jian-Bai Xia ; Zhongming Wei.(2018).Large tunneling magnetoresistance in magnetic tunneling junctions based on two-dimensional CrX 3 (X = Br, I) monolayers.NANOSCALE,10(47),22196-22202.
MLA Longfei Pan; Le Huang; Mianzeng Zhong; Xiang-Wei Jiang; Hui-Xiong Deng; Jingbo Li; Jian-Bai Xia ; Zhongming Wei."Large tunneling magnetoresistance in magnetic tunneling junctions based on two-dimensional CrX 3 (X = Br, I) monolayers".NANOSCALE 10.47(2018):22196-22202.
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