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Enhancement of tunneling current in phosphorene tunnel field effect transistors by surface defects
Juan Lu;   Zhi-Qiang Fan;   Jian Gong;   Jie-Zhi Chen;   Huhe ManduLa;   Yan-Yang Zhang;   Shen-Yuan Yang Xiang-Wei Jiang
2018
Source PublicationPHYSICAL CHEMISTRY CHEMICAL PHYSICS
Volume20Issue:8Pages:5699-5707
Indexed BySCI
Language英语
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/29202
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
Juan Lu; Zhi-Qiang Fan; Jian Gong; Jie-Zhi Chen; Huhe ManduLa; Yan-Yang Zhang; Shen-Yuan Yang Xiang-Wei Jiang. Enhancement of tunneling current in phosphorene tunnel field effect transistors by surface defects[J]. PHYSICAL CHEMISTRY CHEMICAL PHYSICS,2018,20(8):5699-5707.
APA Juan Lu; Zhi-Qiang Fan; Jian Gong; Jie-Zhi Chen; Huhe ManduLa; Yan-Yang Zhang; Shen-Yuan Yang Xiang-Wei Jiang.(2018).Enhancement of tunneling current in phosphorene tunnel field effect transistors by surface defects.PHYSICAL CHEMISTRY CHEMICAL PHYSICS,20(8),5699-5707.
MLA Juan Lu; Zhi-Qiang Fan; Jian Gong; Jie-Zhi Chen; Huhe ManduLa; Yan-Yang Zhang; Shen-Yuan Yang Xiang-Wei Jiang."Enhancement of tunneling current in phosphorene tunnel field effect transistors by surface defects".PHYSICAL CHEMISTRY CHEMICAL PHYSICS 20.8(2018):5699-5707.
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