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Electrical contacts and tunable rectifications in monolayer GeSe-metal junctions
Zhi-Qiang Fan;  Jiezhi Chen;  Xiangwei Jiang
2018
Source PublicationJournal of Physics D: Applied Physics
Volume51Issue:33Pages:335104
Indexed BySCI
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/29201
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
Zhi-Qiang Fan;Jiezhi Chen;Xiangwei Jiang. Electrical contacts and tunable rectifications in monolayer GeSe-metal junctions[J]. Journal of Physics D: Applied Physics,2018,51(33):335104.
APA Zhi-Qiang Fan;Jiezhi Chen;Xiangwei Jiang.(2018).Electrical contacts and tunable rectifications in monolayer GeSe-metal junctions.Journal of Physics D: Applied Physics,51(33),335104.
MLA Zhi-Qiang Fan;Jiezhi Chen;Xiangwei Jiang."Electrical contacts and tunable rectifications in monolayer GeSe-metal junctions".Journal of Physics D: Applied Physics 51.33(2018):335104.
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