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Comment on “Fundamental Resolution of Difficulties in the Theory of Charged Point Defects in Semiconductors”
Hui-Xiong Deng;Su-Huai Wei
2018
Source PublicationPhysical Review Letters
Volume120Issue:3Pages:039601
Indexed BySCI
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/29196
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
Hui-Xiong Deng;Su-Huai Wei. Comment on “Fundamental Resolution of Difficulties in the Theory of Charged Point Defects in Semiconductors”[J]. Physical Review Letters,2018,120(3):039601.
APA Hui-Xiong Deng;Su-Huai Wei.(2018).Comment on “Fundamental Resolution of Difficulties in the Theory of Charged Point Defects in Semiconductors”.Physical Review Letters,120(3),039601.
MLA Hui-Xiong Deng;Su-Huai Wei."Comment on “Fundamental Resolution of Difficulties in the Theory of Charged Point Defects in Semiconductors”".Physical Review Letters 120.3(2018):039601.
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