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Effects of Electric Field on the Electronic Structures of Broken-gap Phosphorene/SnX 2 (X =S, Se) van der Waals Heterojunctions
Congxin Xia;  Juan Du;  Meng Li;  Xueping Li;  Xu Zhao;  Tianxing Wang;  Jingbo Li
2018
Source PublicationPhysical Review Applied
Volume10Issue:5Pages:054064
Indexed BySCI
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/29179
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Congxin Xia;Juan Du;Meng Li;Xueping Li;Xu Zhao;Tianxing Wang;Jingbo Li. Effects of Electric Field on the Electronic Structures of Broken-gap Phosphorene/SnX 2 (X =S, Se) van der Waals Heterojunctions[J]. Physical Review Applied,2018,10(5):054064.
APA Congxin Xia;Juan Du;Meng Li;Xueping Li;Xu Zhao;Tianxing Wang;Jingbo Li.(2018).Effects of Electric Field on the Electronic Structures of Broken-gap Phosphorene/SnX 2 (X =S, Se) van der Waals Heterojunctions.Physical Review Applied,10(5),054064.
MLA Congxin Xia;Juan Du;Meng Li;Xueping Li;Xu Zhao;Tianxing Wang;Jingbo Li."Effects of Electric Field on the Electronic Structures of Broken-gap Phosphorene/SnX 2 (X =S, Se) van der Waals Heterojunctions".Physical Review Applied 10.5(2018):054064.
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