Effects of Electric Field on the Electronic Structures of Broken-gap Phosphorene/SnX 2 (X =S, Se) van der Waals Heterojunctions

	Effects of Electric Field on the Electronic Structures of Broken-gap Phosphorene/SnX 2 (X =S, Se) van der Waals Heterojunctions
	Congxin Xia; Juan Du; Meng Li; Xueping Li; Xu Zhao; Tianxing Wang; Jingbo Li
	2018
Source Publication	Physical Review Applied
Volume	10 Issue:5 Pages:054064
Indexed By	SCI
Document Type	期刊论文
Identifier	http://ir.semi.ac.cn/handle/172111/29179
Collection	中科院半导体材料科学重点实验室
Recommended Citation GB/T 7714	Congxin Xia;Juan Du;Meng Li;Xueping Li;Xu Zhao;Tianxing Wang;Jingbo Li. Effects of Electric Field on the Electronic Structures of Broken-gap Phosphorene/SnX 2 (X =S, Se) van der Waals Heterojunctions[J]. Physical Review Applied,2018,10(5):054064.
APA	Congxin Xia;Juan Du;Meng Li;Xueping Li;Xu Zhao;Tianxing Wang;Jingbo Li.(2018).Effects of Electric Field on the Electronic Structures of Broken-gap Phosphorene/SnX 2 (X =S, Se) van der Waals Heterojunctions.Physical Review Applied,10(5),054064.
MLA	Congxin Xia;Juan Du;Meng Li;Xueping Li;Xu Zhao;Tianxing Wang;Jingbo Li."Effects of Electric Field on the Electronic Structures of Broken-gap Phosphorene/SnX 2 (X =S, Se) van der Waals Heterojunctions".Physical Review Applied 10.5(2018):054064.

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