Effects of Electric Field on the Electronic Structures of Broken-gap Phosphorene/SnX 2 (X =S, Se) van der Waals Heterojunctions | |
Congxin Xia; Juan Du; Meng Li; Xueping Li; Xu Zhao; Tianxing Wang; Jingbo Li | |
2018 | |
Source Publication | Physical Review Applied
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Volume | 10Issue:5Pages:054064 |
Indexed By | SCI |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/29179 |
Collection | 中科院半导体材料科学重点实验室 |
Recommended Citation GB/T 7714 | Congxin Xia;Juan Du;Meng Li;Xueping Li;Xu Zhao;Tianxing Wang;Jingbo Li. Effects of Electric Field on the Electronic Structures of Broken-gap Phosphorene/SnX 2 (X =S, Se) van der Waals Heterojunctions[J]. Physical Review Applied,2018,10(5):054064. |
APA | Congxin Xia;Juan Du;Meng Li;Xueping Li;Xu Zhao;Tianxing Wang;Jingbo Li.(2018).Effects of Electric Field on the Electronic Structures of Broken-gap Phosphorene/SnX 2 (X =S, Se) van der Waals Heterojunctions.Physical Review Applied,10(5),054064. |
MLA | Congxin Xia;Juan Du;Meng Li;Xueping Li;Xu Zhao;Tianxing Wang;Jingbo Li."Effects of Electric Field on the Electronic Structures of Broken-gap Phosphorene/SnX 2 (X =S, Se) van der Waals Heterojunctions".Physical Review Applied 10.5(2018):054064. |
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File Name/Size | DocType | Version | Access | License | ||
Effects of Electric (1303KB) | 期刊论文 | 作者接受稿 | 限制开放 | CC BY-NC-SA | Application Full Text |
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