SEMI OpenIR  > 中科院半导体材料科学重点实验室
The Residual Stress and Al Incorporation of AlGaN Epilayers by Metalorganic Chemical Vapor Deposition
Li Fangzheng;  Wang Lianshan;  Zhao Guijuan;  Meng Yulin;  Li Huijie;  Chen Yanan;  Yang Shaoyan;  Jin Peng;  Wang Zhanguo
2018
Source PublicationJOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
Volume18Issue:11Pages:7484-7488
Indexed BySCI
Language英语
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/29178
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Li Fangzheng;Wang Lianshan;Zhao Guijuan;Meng Yulin;Li Huijie;Chen Yanan;Yang Shaoyan;Jin Peng;Wang Zhanguo. The Residual Stress and Al Incorporation of AlGaN Epilayers by Metalorganic Chemical Vapor Deposition[J]. JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY,2018,18(11):7484-7488.
APA Li Fangzheng;Wang Lianshan;Zhao Guijuan;Meng Yulin;Li Huijie;Chen Yanan;Yang Shaoyan;Jin Peng;Wang Zhanguo.(2018).The Residual Stress and Al Incorporation of AlGaN Epilayers by Metalorganic Chemical Vapor Deposition.JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY,18(11),7484-7488.
MLA Li Fangzheng;Wang Lianshan;Zhao Guijuan;Meng Yulin;Li Huijie;Chen Yanan;Yang Shaoyan;Jin Peng;Wang Zhanguo."The Residual Stress and Al Incorporation of AlGaN Epilayers by Metalorganic Chemical Vapor Deposition".JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY 18.11(2018):7484-7488.
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