| Red Emission of InGaN/GaN Multiple-Quantum-Well Light-Emitting Diode Structures With Indium-Rich Clusters | |
| Meng Yulin; Wang Lianshan; Zhao Guijuan; Li Fangzheng; Li Huijie; Yang Shaoyan; Wang Zhanguo | |
| 2018 | |
| Source Publication | PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
 |
| Volume | 215Issue:23Pages:1800455 |
| Indexed By | SCI |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/29176 |
| Collection | 中科院半导体材料科学重点实验室 |
| Recommended Citation GB/T 7714 | Meng Yulin;Wang Lianshan;Zhao Guijuan;Li Fangzheng;Li Huijie;Yang Shaoyan;Wang Zhanguo. Red Emission of InGaN/GaN Multiple-Quantum-Well Light-Emitting Diode Structures With Indium-Rich Clusters[J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE,2018,215(23):1800455. |
| APA | Meng Yulin;Wang Lianshan;Zhao Guijuan;Li Fangzheng;Li Huijie;Yang Shaoyan;Wang Zhanguo.(2018).Red Emission of InGaN/GaN Multiple-Quantum-Well Light-Emitting Diode Structures With Indium-Rich Clusters.PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE,215(23),1800455. |
| MLA | Meng Yulin;Wang Lianshan;Zhao Guijuan;Li Fangzheng;Li Huijie;Yang Shaoyan;Wang Zhanguo."Red Emission of InGaN/GaN Multiple-Quantum-Well Light-Emitting Diode Structures With Indium-Rich Clusters".PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE 215.23(2018):1800455. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| Red Emission of InGa（1290KB） | 期刊论文 | 作者接受稿 | 限制开放 | CC BY-NC-SA | Application Full Text | |
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