Red Emission of InGaN/GaN Multiple-Quantum-Well Light-Emitting Diode Structures With Indium-Rich Clusters | |
Meng Yulin; Wang Lianshan; Zhao Guijuan; Li Fangzheng; Li Huijie; Yang Shaoyan; Wang Zhanguo | |
2018 | |
Source Publication | PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
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Volume | 215Issue:23Pages:1800455 |
Indexed By | SCI |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/29176 |
Collection | 中科院半导体材料科学重点实验室 |
Recommended Citation GB/T 7714 | Meng Yulin;Wang Lianshan;Zhao Guijuan;Li Fangzheng;Li Huijie;Yang Shaoyan;Wang Zhanguo. Red Emission of InGaN/GaN Multiple-Quantum-Well Light-Emitting Diode Structures With Indium-Rich Clusters[J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE,2018,215(23):1800455. |
APA | Meng Yulin;Wang Lianshan;Zhao Guijuan;Li Fangzheng;Li Huijie;Yang Shaoyan;Wang Zhanguo.(2018).Red Emission of InGaN/GaN Multiple-Quantum-Well Light-Emitting Diode Structures With Indium-Rich Clusters.PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE,215(23),1800455. |
MLA | Meng Yulin;Wang Lianshan;Zhao Guijuan;Li Fangzheng;Li Huijie;Yang Shaoyan;Wang Zhanguo."Red Emission of InGaN/GaN Multiple-Quantum-Well Light-Emitting Diode Structures With Indium-Rich Clusters".PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE 215.23(2018):1800455. |
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Red Emission of InGa(1290KB) | 期刊论文 | 作者接受稿 | 限制开放 | CC BY-NC-SA | Application Full Text |
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