| Measurement of semi-polar (11–22) plane AlN/GaN heterojunction band offsets by X-ray photoelectron spectroscopy | |
| Guijuan Zhao; Huijie Li; Lianshan Wang; Yulin Meng; Fangzheng Li; Hongyuan Wei; Shaoyan Yang; Zhanguo Wang | |
| 2018 | |
| Source Publication | Applied Physics A
 |
| Volume | 124Issue:2Pages:130 |
| Indexed By | SCI |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/29174 |
| Collection | 中科院半导体材料科学重点实验室 |
| Recommended Citation GB/T 7714 | Guijuan Zhao;Huijie Li;Lianshan Wang;Yulin Meng;Fangzheng Li;Hongyuan Wei;Shaoyan Yang;Zhanguo Wang. Measurement of semi-polar (11–22) plane AlN/GaN heterojunction band offsets by X-ray photoelectron spectroscopy[J]. Applied Physics A,2018,124(2):130. |
| APA | Guijuan Zhao;Huijie Li;Lianshan Wang;Yulin Meng;Fangzheng Li;Hongyuan Wei;Shaoyan Yang;Zhanguo Wang.(2018).Measurement of semi-polar (11–22) plane AlN/GaN heterojunction band offsets by X-ray photoelectron spectroscopy.Applied Physics A,124(2),130. |
| MLA | Guijuan Zhao;Huijie Li;Lianshan Wang;Yulin Meng;Fangzheng Li;Hongyuan Wei;Shaoyan Yang;Zhanguo Wang."Measurement of semi-polar (11–22) plane AlN/GaN heterojunction band offsets by X-ray photoelectron spectroscopy".Applied Physics A 124.2(2018):130. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| Measurement of semi-（1656KB） | 期刊论文 | 作者接受稿 | 限制开放 | CC BY-NC-SA | Application Full Text | |
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