SEMI OpenIR  > 中科院半导体材料科学重点实验室
Measurement of semi-polar (11–22) plane AlN/GaN heterojunction band offsets by X-ray photoelectron spectroscopy
Guijuan Zhao;  Huijie Li;  Lianshan Wang;  Yulin Meng;  Fangzheng Li;  Hongyuan Wei;  Shaoyan Yang;  Zhanguo Wang
2018
Source PublicationApplied Physics A
Volume124Issue:2Pages:130
Indexed BySCI
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/29174
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Guijuan Zhao;Huijie Li;Lianshan Wang;Yulin Meng;Fangzheng Li;Hongyuan Wei;Shaoyan Yang;Zhanguo Wang. Measurement of semi-polar (11–22) plane AlN/GaN heterojunction band offsets by X-ray photoelectron spectroscopy[J]. Applied Physics A,2018,124(2):130.
APA Guijuan Zhao;Huijie Li;Lianshan Wang;Yulin Meng;Fangzheng Li;Hongyuan Wei;Shaoyan Yang;Zhanguo Wang.(2018).Measurement of semi-polar (11–22) plane AlN/GaN heterojunction band offsets by X-ray photoelectron spectroscopy.Applied Physics A,124(2),130.
MLA Guijuan Zhao;Huijie Li;Lianshan Wang;Yulin Meng;Fangzheng Li;Hongyuan Wei;Shaoyan Yang;Zhanguo Wang."Measurement of semi-polar (11–22) plane AlN/GaN heterojunction band offsets by X-ray photoelectron spectroscopy".Applied Physics A 124.2(2018):130.
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