SEMI OpenIR  > 中科院半导体材料科学重点实验室
Comparative Investigation of Semipolar (11-22) GaN Layers on m-Plane Sapphire with Different Nucleation Layers
Wang Lianshan;  Zhao Guijuan;  Meng Yulin;  Li Huijie;  Yang Shaoyan;  Wang Zhanguo
2018
Source PublicationJOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
Volume18Issue:11Pages:7446-7450
Indexed BySCI
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/29173
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Wang Lianshan;Zhao Guijuan;Meng Yulin;Li Huijie;Yang Shaoyan;Wang Zhanguo. Comparative Investigation of Semipolar (11-22) GaN Layers on m-Plane Sapphire with Different Nucleation Layers[J]. JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY,2018,18(11):7446-7450.
APA Wang Lianshan;Zhao Guijuan;Meng Yulin;Li Huijie;Yang Shaoyan;Wang Zhanguo.(2018).Comparative Investigation of Semipolar (11-22) GaN Layers on m-Plane Sapphire with Different Nucleation Layers.JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY,18(11),7446-7450.
MLA Wang Lianshan;Zhao Guijuan;Meng Yulin;Li Huijie;Yang Shaoyan;Wang Zhanguo."Comparative Investigation of Semipolar (11-22) GaN Layers on m-Plane Sapphire with Different Nucleation Layers".JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY 18.11(2018):7446-7450.
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