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LVM Spectroscopy Investigation of Complex Defects in InAs Single Crystals Grown by the LEC Method
Guiying Shen;  Youwen Zhao;  Jingming Liu;  Yongbiao Bai;  Zhiyuan Dong;  Hui Xie;  Xiaoyu Chen
2018
Source PublicationJournal of Electronic Materials
Volume47Issue:9Pages:4998-5001
Indexed BySCI
Language英语
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/29172
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Guiying Shen;Youwen Zhao;Jingming Liu;Yongbiao Bai;Zhiyuan Dong;Hui Xie;Xiaoyu Chen. LVM Spectroscopy Investigation of Complex Defects in InAs Single Crystals Grown by the LEC Method[J]. Journal of Electronic Materials,2018,47(9):4998-5001.
APA Guiying Shen;Youwen Zhao;Jingming Liu;Yongbiao Bai;Zhiyuan Dong;Hui Xie;Xiaoyu Chen.(2018).LVM Spectroscopy Investigation of Complex Defects in InAs Single Crystals Grown by the LEC Method.Journal of Electronic Materials,47(9),4998-5001.
MLA Guiying Shen;Youwen Zhao;Jingming Liu;Yongbiao Bai;Zhiyuan Dong;Hui Xie;Xiaoyu Chen."LVM Spectroscopy Investigation of Complex Defects in InAs Single Crystals Grown by the LEC Method".Journal of Electronic Materials 47.9(2018):4998-5001.
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