SEMI OpenIR  > 中科院半导体材料科学重点实验室
Impurity band conduction in Mn-doped p type InAs single crystal
Guiying Shen ;   Youwen Zhao ;   Yongbiao Bai ;   Ding Yu ;   Jingming Liu ;   Hui Xie ;   Zhiyuan Dong ;   Jun Yang ;   Fengyun Yang ;   Fenghua Wang
2018
Source PublicationMaterials Science in Semiconductor Processing
Volume84Pages:115-118
Indexed BySCI
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/29171
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Guiying Shen ; Youwen Zhao ; Yongbiao Bai ; Ding Yu ; Jingming Liu ; Hui Xie ; Zhiyuan Dong ; Jun Yang ; Fengyun Yang ; Fenghua Wang. Impurity band conduction in Mn-doped p type InAs single crystal[J]. Materials Science in Semiconductor Processing,2018,84:115-118.
APA Guiying Shen ; Youwen Zhao ; Yongbiao Bai ; Ding Yu ; Jingming Liu ; Hui Xie ; Zhiyuan Dong ; Jun Yang ; Fengyun Yang ; Fenghua Wang.(2018).Impurity band conduction in Mn-doped p type InAs single crystal.Materials Science in Semiconductor Processing,84,115-118.
MLA Guiying Shen ; Youwen Zhao ; Yongbiao Bai ; Ding Yu ; Jingming Liu ; Hui Xie ; Zhiyuan Dong ; Jun Yang ; Fengyun Yang ; Fenghua Wang."Impurity band conduction in Mn-doped p type InAs single crystal".Materials Science in Semiconductor Processing 84(2018):115-118.
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