SEMI OpenIR  > 中科院半导体材料科学重点实验室
The influence of MBE and device structure on the electrical properties of GaAs HEMT biosensors
Luo Jiaming;  Guan Min;  Zhang Yang
2018
Source PublicationJOURNAL OF SEMICONDUCTORS
Volume39Issue:12Pages:124007
Indexed BySCI
Language英语
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/29167
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Luo Jiaming;Guan Min;Zhang Yang. The influence of MBE and device structure on the electrical properties of GaAs HEMT biosensors[J]. JOURNAL OF SEMICONDUCTORS,2018,39(12):124007.
APA Luo Jiaming;Guan Min;Zhang Yang.(2018).The influence of MBE and device structure on the electrical properties of GaAs HEMT biosensors.JOURNAL OF SEMICONDUCTORS,39(12),124007.
MLA Luo Jiaming;Guan Min;Zhang Yang."The influence of MBE and device structure on the electrical properties of GaAs HEMT biosensors".JOURNAL OF SEMICONDUCTORS 39.12(2018):124007.
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