SEMI OpenIR  > 中科院半导体材料科学重点实验室
Process optimization for homoepitaxial growth of thick 4H-SiC films via hydrogen chloride chemical vapor deposition
X.F. Liu ;   G.G. Yan ;   B. Liu ;   Z.W. Shen ;   Z.X. Wen ;   J. Chen ;   W.S. Zhao ;   L. Wang ;   F. Zhang ;   G.S. Sun ;   Y.P. Zeng
2018
Source PublicationJOURNAL OF CRYSTAL GROWTH
Volume504Pages:7-12
Indexed BySCI
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/29166
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
X.F. Liu ; G.G. Yan ; B. Liu ; Z.W. Shen ; Z.X. Wen ; J. Chen ; W.S. Zhao ; L. Wang ; F. Zhang ; G.S. Sun ; Y.P. Zeng. Process optimization for homoepitaxial growth of thick 4H-SiC films via hydrogen chloride chemical vapor deposition[J]. JOURNAL OF CRYSTAL GROWTH,2018,504:7-12.
APA X.F. Liu ; G.G. Yan ; B. Liu ; Z.W. Shen ; Z.X. Wen ; J. Chen ; W.S. Zhao ; L. Wang ; F. Zhang ; G.S. Sun ; Y.P. Zeng.(2018).Process optimization for homoepitaxial growth of thick 4H-SiC films via hydrogen chloride chemical vapor deposition.JOURNAL OF CRYSTAL GROWTH,504,7-12.
MLA X.F. Liu ; G.G. Yan ; B. Liu ; Z.W. Shen ; Z.X. Wen ; J. Chen ; W.S. Zhao ; L. Wang ; F. Zhang ; G.S. Sun ; Y.P. Zeng."Process optimization for homoepitaxial growth of thick 4H-SiC films via hydrogen chloride chemical vapor deposition".JOURNAL OF CRYSTAL GROWTH 504(2018):7-12.
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