SEMI OpenIR  > 中科院半导体材料科学重点实验室
Interface Engineering of High-Performance Perovskite Photodetectors Based on PVP/SnO 2 Electron Transport Layer
Ye Wang;  Xingwang Zhang;  Qi Jiang;  Heng Liu;  Denggui Wang;  Junhua Meng;  Jingbi You;  Zhigang Yin
2018
Source PublicationACS Applied Materials & Interfaces
Volume10Issue:7Pages:6505-6512
Indexed BySCI
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/29159
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Ye Wang;Xingwang Zhang;Qi Jiang;Heng Liu;Denggui Wang;Junhua Meng;Jingbi You;Zhigang Yin. Interface Engineering of High-Performance Perovskite Photodetectors Based on PVP/SnO 2 Electron Transport Layer[J]. ACS Applied Materials & Interfaces,2018,10(7):6505-6512.
APA Ye Wang;Xingwang Zhang;Qi Jiang;Heng Liu;Denggui Wang;Junhua Meng;Jingbi You;Zhigang Yin.(2018).Interface Engineering of High-Performance Perovskite Photodetectors Based on PVP/SnO 2 Electron Transport Layer.ACS Applied Materials & Interfaces,10(7),6505-6512.
MLA Ye Wang;Xingwang Zhang;Qi Jiang;Heng Liu;Denggui Wang;Junhua Meng;Jingbi You;Zhigang Yin."Interface Engineering of High-Performance Perovskite Photodetectors Based on PVP/SnO 2 Electron Transport Layer".ACS Applied Materials & Interfaces 10.7(2018):6505-6512.
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