SEMI OpenIR  > 中科院半导体材料科学重点实验室
Selective Direct Growth of Atomic Layered HfS 2 on Hexagonal Boron Nitride for High Performance Photodetectors
Denggui Wang;   Junhua Meng;   Xingwang Zhang;   Gencai Guo;   Zhigang Yin;   Heng Liu;   Likun Cheng;   Menglei Gao;   Jingbi You;   Ruzhi Wang
2018
Source PublicationChemistry of Materials
Volume30Issue:11Pages:3819-3826
Indexed BySCI
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/29156
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Denggui Wang; Junhua Meng; Xingwang Zhang; Gencai Guo; Zhigang Yin; Heng Liu; Likun Cheng; Menglei Gao; Jingbi You; Ruzhi Wang. Selective Direct Growth of Atomic Layered HfS 2 on Hexagonal Boron Nitride for High Performance Photodetectors[J]. Chemistry of Materials,2018,30(11):3819-3826.
APA Denggui Wang; Junhua Meng; Xingwang Zhang; Gencai Guo; Zhigang Yin; Heng Liu; Likun Cheng; Menglei Gao; Jingbi You; Ruzhi Wang.(2018).Selective Direct Growth of Atomic Layered HfS 2 on Hexagonal Boron Nitride for High Performance Photodetectors.Chemistry of Materials,30(11),3819-3826.
MLA Denggui Wang; Junhua Meng; Xingwang Zhang; Gencai Guo; Zhigang Yin; Heng Liu; Likun Cheng; Menglei Gao; Jingbi You; Ruzhi Wang."Selective Direct Growth of Atomic Layered HfS 2 on Hexagonal Boron Nitride for High Performance Photodetectors".Chemistry of Materials 30.11(2018):3819-3826.
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