| Selective Direct Growth of Atomic Layered HfS 2 on Hexagonal Boron Nitride for High Performance Photodetectors | |
| Denggui Wang; Junhua Meng; Xingwang Zhang; Gencai Guo; Zhigang Yin; Heng Liu; Likun Cheng; Menglei Gao; Jingbi You; Ruzhi Wang | |
| 2018 | |
| Source Publication | Chemistry of Materials
 |
| Volume | 30Issue:11Pages:3819-3826 |
| Indexed By | SCI |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/29156 |
| Collection | 中科院半导体材料科学重点实验室 |
| Recommended Citation GB/T 7714 | Denggui Wang; Junhua Meng; Xingwang Zhang; Gencai Guo; Zhigang Yin; Heng Liu; Likun Cheng; Menglei Gao; Jingbi You; Ruzhi Wang. Selective Direct Growth of Atomic Layered HfS 2 on Hexagonal Boron Nitride for High Performance Photodetectors[J]. Chemistry of Materials,2018,30(11):3819-3826. |
| APA | Denggui Wang; Junhua Meng; Xingwang Zhang; Gencai Guo; Zhigang Yin; Heng Liu; Likun Cheng; Menglei Gao; Jingbi You; Ruzhi Wang.(2018).Selective Direct Growth of Atomic Layered HfS 2 on Hexagonal Boron Nitride for High Performance Photodetectors.Chemistry of Materials,30(11),3819-3826. |
| MLA | Denggui Wang; Junhua Meng; Xingwang Zhang; Gencai Guo; Zhigang Yin; Heng Liu; Likun Cheng; Menglei Gao; Jingbi You; Ruzhi Wang."Selective Direct Growth of Atomic Layered HfS 2 on Hexagonal Boron Nitride for High Performance Photodetectors".Chemistry of Materials 30.11(2018):3819-3826. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| Selective direct gro（6535KB） | 期刊论文 | 作者接受稿 | 限制开放 | CC BY-NC-SA | Application Full Text | |
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