SEMI OpenIR  > 中科院半导体材料科学重点实验室
AlGaInAs EML having high extinction ratios fabricated by identical epitaxial layer technique
Qiufang Deng;   Lu Guo;   Song Liang ;   Siwei Sun;   Xiao Xie;   Hongliang Zhu;   Wei Wang
2018
Source PublicationOptics Communications
Volume413Pages:54-57
Indexed BySCI
Language英语
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/29136
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Qiufang Deng; Lu Guo; Song Liang ; Siwei Sun; Xiao Xie; Hongliang Zhu; Wei Wang. AlGaInAs EML having high extinction ratios fabricated by identical epitaxial layer technique[J]. Optics Communications,2018,413:54-57.
APA Qiufang Deng; Lu Guo; Song Liang ; Siwei Sun; Xiao Xie; Hongliang Zhu; Wei Wang.(2018).AlGaInAs EML having high extinction ratios fabricated by identical epitaxial layer technique.Optics Communications,413,54-57.
MLA Qiufang Deng; Lu Guo; Song Liang ; Siwei Sun; Xiao Xie; Hongliang Zhu; Wei Wang."AlGaInAs EML having high extinction ratios fabricated by identical epitaxial layer technique".Optics Communications 413(2018):54-57.
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