| AlGaInAs EML having high extinction ratios fabricated by identical epitaxial layer technique | |
| Qiufang Deng; Lu Guo; Song Liang ; Siwei Sun; Xiao Xie; Hongliang Zhu; Wei Wang | |
| 2018 | |
| Source Publication | Optics Communications
 |
| Volume | 413Pages:54-57 |
| Indexed By | SCI |
| Language | 英语 |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/29136 |
| Collection | 中科院半导体材料科学重点实验室 |
| Recommended Citation GB/T 7714 | Qiufang Deng; Lu Guo; Song Liang ; Siwei Sun; Xiao Xie; Hongliang Zhu; Wei Wang. AlGaInAs EML having high extinction ratios fabricated by identical epitaxial layer technique[J]. Optics Communications,2018,413:54-57. |
| APA | Qiufang Deng; Lu Guo; Song Liang ; Siwei Sun; Xiao Xie; Hongliang Zhu; Wei Wang.(2018).AlGaInAs EML having high extinction ratios fabricated by identical epitaxial layer technique.Optics Communications,413,54-57. |
| MLA | Qiufang Deng; Lu Guo; Song Liang ; Siwei Sun; Xiao Xie; Hongliang Zhu; Wei Wang."AlGaInAs EML having high extinction ratios fabricated by identical epitaxial layer technique".Optics Communications 413(2018):54-57. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| AlGaInAs EML having （959KB） | 期刊论文 | 作者接受稿 | 限制开放 | CC BY-NC-SA | Application Full Text | |
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