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Out of plane stacking of InSe-based heterostructures towards high performance electronic and optoelectronic devices using a graphene electrode
Gao Wei;  Zheng Zhaoqiang;  Li Yongtao;  Xia Congxin;  Du Juan;  Zhao Yu;  Li Jingbo
2018
Source PublicationJOURNAL OF MATERIALS CHEMISTRY C
Volume6Issue:46Pages:12433–12760
Indexed BySCI
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/29135
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
Gao Wei;Zheng Zhaoqiang;Li Yongtao;Xia Congxin;Du Juan;Zhao Yu;Li Jingbo. Out of plane stacking of InSe-based heterostructures towards high performance electronic and optoelectronic devices using a graphene electrode[J]. JOURNAL OF MATERIALS CHEMISTRY C,2018,6(46):12433–12760.
APA Gao Wei;Zheng Zhaoqiang;Li Yongtao;Xia Congxin;Du Juan;Zhao Yu;Li Jingbo.(2018).Out of plane stacking of InSe-based heterostructures towards high performance electronic and optoelectronic devices using a graphene electrode.JOURNAL OF MATERIALS CHEMISTRY C,6(46),12433–12760.
MLA Gao Wei;Zheng Zhaoqiang;Li Yongtao;Xia Congxin;Du Juan;Zhao Yu;Li Jingbo."Out of plane stacking of InSe-based heterostructures towards high performance electronic and optoelectronic devices using a graphene electrode".JOURNAL OF MATERIALS CHEMISTRY C 6.46(2018):12433–12760.
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