SEMI OpenIR  > 中科院半导体材料科学重点实验室
Defect-free InAsSb nanowire arrays on Si substrates grown by selective-area metal– organic chemical vapor deposition
Xiaoguang Yang ;  Wenna Du;  Xianghai Ji ;   Xingwang Zhang;  Tao Yang
2018
Source PublicationNanotechnology
Volume29Pages:405601 (6pp)
Indexed BySCI
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/29126
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Xiaoguang Yang ;Wenna Du;Xianghai Ji ; Xingwang Zhang;Tao Yang. Defect-free InAsSb nanowire arrays on Si substrates grown by selective-area metal– organic chemical vapor deposition[J]. Nanotechnology,2018,29:405601 (6pp).
APA Xiaoguang Yang ;Wenna Du;Xianghai Ji ; Xingwang Zhang;Tao Yang.(2018).Defect-free InAsSb nanowire arrays on Si substrates grown by selective-area metal– organic chemical vapor deposition.Nanotechnology,29,405601 (6pp).
MLA Xiaoguang Yang ;Wenna Du;Xianghai Ji ; Xingwang Zhang;Tao Yang."Defect-free InAsSb nanowire arrays on Si substrates grown by selective-area metal– organic chemical vapor deposition".Nanotechnology 29(2018):405601 (6pp).
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