| Defect-free InAsSb nanowire arrays on Si substrates grown by selective-area metal– organic chemical vapor deposition | |
| Xiaoguang Yang ; Wenna Du; Xianghai Ji ; Xingwang Zhang; Tao Yang | |
| 2018 | |
| Source Publication | Nanotechnology
 |
| Volume | 29Pages:405601 (6pp) |
| Indexed By | SCI |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/29126 |
| Collection | 中科院半导体材料科学重点实验室 |
| Recommended Citation GB/T 7714 | Xiaoguang Yang ;Wenna Du;Xianghai Ji ; Xingwang Zhang;Tao Yang. Defect-free InAsSb nanowire arrays on Si substrates grown by selective-area metal– organic chemical vapor deposition[J]. Nanotechnology,2018,29:405601 (6pp). |
| APA | Xiaoguang Yang ;Wenna Du;Xianghai Ji ; Xingwang Zhang;Tao Yang.(2018).Defect-free InAsSb nanowire arrays on Si substrates grown by selective-area metal– organic chemical vapor deposition.Nanotechnology,29,405601 (6pp). |
| MLA | Xiaoguang Yang ;Wenna Du;Xianghai Ji ; Xingwang Zhang;Tao Yang."Defect-free InAsSb nanowire arrays on Si substrates grown by selective-area metal– organic chemical vapor deposition".Nanotechnology 29(2018):405601 (6pp). |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| Defect-free InAsSb n（147KB） | 期刊论文 | 作者接受稿 | 限制开放 | CC BY-NC-SA | Application Full Text | |
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