SEMI OpenIR  > 中科院半导体材料科学重点实验室
Optimization of hetero-epitaxial growth for the threading dislocation density reduction of germanium epilayers
Haining Chong ;   Zhewei Wang ;   Chaonan Chen ;   Zemin Xu ;   Ke Wu ;   Lan Wu ;   Bo Xu ;   Hui Ye
2018
Source PublicationJournal of Crystal Growth
Volume488Pages:8–15
Indexed BySCI
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/29124
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Haining Chong ; Zhewei Wang ; Chaonan Chen ; Zemin Xu ; Ke Wu ; Lan Wu ; Bo Xu ; Hui Ye. Optimization of hetero-epitaxial growth for the threading dislocation density reduction of germanium epilayers[J]. Journal of Crystal Growth,2018,488:8–15.
APA Haining Chong ; Zhewei Wang ; Chaonan Chen ; Zemin Xu ; Ke Wu ; Lan Wu ; Bo Xu ; Hui Ye.(2018).Optimization of hetero-epitaxial growth for the threading dislocation density reduction of germanium epilayers.Journal of Crystal Growth,488,8–15.
MLA Haining Chong ; Zhewei Wang ; Chaonan Chen ; Zemin Xu ; Ke Wu ; Lan Wu ; Bo Xu ; Hui Ye."Optimization of hetero-epitaxial growth for the threading dislocation density reduction of germanium epilayers".Journal of Crystal Growth 488(2018):8–15.
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