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Gate Leakage and Breakdown Characteristics of AlGaN/GaN High-Electron-Mobility Transistors with Fe Delta-Doped Buffer
Meilan Hao ;   Quan Wang ;   Lijuan Jiang ;   Chun Feng ;   Changxi Chen ;   Cuimei Wang ;   Hongling Xiao ;   Fengqi Liu ;   Xiangang Xu ;   Xiaoliang Wang ;   Zhanguo Wang
2018
Source PublicationNANOSCIENCE AND NANOTECHNOLOGY LETTERS
Volume10Issue:2Pages:185-189
Indexed BySCI
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/29100
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Meilan Hao ; Quan Wang ; Lijuan Jiang ; Chun Feng ; Changxi Chen ; Cuimei Wang ; Hongling Xiao ; Fengqi Liu ; Xiangang Xu ; Xiaoliang Wang ; Zhanguo Wang. Gate Leakage and Breakdown Characteristics of AlGaN/GaN High-Electron-Mobility Transistors with Fe Delta-Doped Buffer[J]. NANOSCIENCE AND NANOTECHNOLOGY LETTERS,2018,10(2):185-189.
APA Meilan Hao ; Quan Wang ; Lijuan Jiang ; Chun Feng ; Changxi Chen ; Cuimei Wang ; Hongling Xiao ; Fengqi Liu ; Xiangang Xu ; Xiaoliang Wang ; Zhanguo Wang.(2018).Gate Leakage and Breakdown Characteristics of AlGaN/GaN High-Electron-Mobility Transistors with Fe Delta-Doped Buffer.NANOSCIENCE AND NANOTECHNOLOGY LETTERS,10(2),185-189.
MLA Meilan Hao ; Quan Wang ; Lijuan Jiang ; Chun Feng ; Changxi Chen ; Cuimei Wang ; Hongling Xiao ; Fengqi Liu ; Xiangang Xu ; Xiaoliang Wang ; Zhanguo Wang."Gate Leakage and Breakdown Characteristics of AlGaN/GaN High-Electron-Mobility Transistors with Fe Delta-Doped Buffer".NANOSCIENCE AND NANOTECHNOLOGY LETTERS 10.2(2018):185-189.
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