Asymmetric resistive switching effect in?ZnO/Nb:SrTiO 3 heterojunctions | |
Caihong Jia ; Yong Ren ; Guang Yang ; Jiachen Li ; Yonghai Chen ; Weifeng Zhang | |
2018 | |
Source Publication | Applied Physics A
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Volume | 124Pages:189 |
Indexed By | SCI |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/29094 |
Collection | 中科院半导体材料科学重点实验室 |
Recommended Citation GB/T 7714 | Caihong Jia ;Yong Ren ;Guang Yang ; Jiachen Li ; Yonghai Chen ;Weifeng Zhang. Asymmetric resistive switching effect in?ZnO/Nb:SrTiO 3 heterojunctions[J]. Applied Physics A,2018,124:189. |
APA | Caihong Jia ;Yong Ren ;Guang Yang ; Jiachen Li ; Yonghai Chen ;Weifeng Zhang.(2018).Asymmetric resistive switching effect in?ZnO/Nb:SrTiO 3 heterojunctions.Applied Physics A,124,189. |
MLA | Caihong Jia ;Yong Ren ;Guang Yang ; Jiachen Li ; Yonghai Chen ;Weifeng Zhang."Asymmetric resistive switching effect in?ZnO/Nb:SrTiO 3 heterojunctions".Applied Physics A 124(2018):189. |
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Asymmetric resistive(1040KB) | 期刊论文 | 作者接受稿 | 限制开放 | CC BY-NC-SA | Application Full Text |
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