SEMI OpenIR  > 中科院半导体材料科学重点实验室
Ferroelectric Field Effect Induced Asymmetric Resistive Switching Effect in BaTiO 3 /Nb:SrTiO 3 Epitaxial Heterojunctions
Caihong Jia ;   Jiachen Li ;   Guang Yang ;   Yonghai Chen ;   Weifeng Zhang
2018
Source PublicationNanoscale Research Letters
Volume13Pages:102
Indexed BySCI
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/29093
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Caihong Jia ; Jiachen Li ; Guang Yang ; Yonghai Chen ; Weifeng Zhang. Ferroelectric Field Effect Induced Asymmetric Resistive Switching Effect in BaTiO 3 /Nb:SrTiO 3 Epitaxial Heterojunctions[J]. Nanoscale Research Letters,2018,13:102.
APA Caihong Jia ; Jiachen Li ; Guang Yang ; Yonghai Chen ; Weifeng Zhang.(2018).Ferroelectric Field Effect Induced Asymmetric Resistive Switching Effect in BaTiO 3 /Nb:SrTiO 3 Epitaxial Heterojunctions.Nanoscale Research Letters,13,102.
MLA Caihong Jia ; Jiachen Li ; Guang Yang ; Yonghai Chen ; Weifeng Zhang."Ferroelectric Field Effect Induced Asymmetric Resistive Switching Effect in BaTiO 3 /Nb:SrTiO 3 Epitaxial Heterojunctions".Nanoscale Research Letters 13(2018):102.
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