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Heavily Boron-Doped Silicon Layer for the Fabrication of Nanoscale Thermoelectric Devices
Zhe Ma ;   Yang Liu ;   Lingxiao Deng ;   Mingliang Zhang ;   Shuyuan Zhang ;   Jing Ma ;   Peishuai Song ;   Qing Liu ;   An Ji ;   Fuhua Yang ;   Xiaodong Wang
2018
Source PublicationNANOMATERIALS
Volume8Issue:2Pages:77
Indexed BySCI
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/29023
Collection半导体集成技术工程研究中心
Recommended Citation
GB/T 7714
Zhe Ma ; Yang Liu ; Lingxiao Deng ; Mingliang Zhang ; Shuyuan Zhang ; Jing Ma ; Peishuai Song ; Qing Liu ; An Ji ; Fuhua Yang ; Xiaodong Wang. Heavily Boron-Doped Silicon Layer for the Fabrication of Nanoscale Thermoelectric Devices[J]. NANOMATERIALS,2018,8(2):77.
APA Zhe Ma ; Yang Liu ; Lingxiao Deng ; Mingliang Zhang ; Shuyuan Zhang ; Jing Ma ; Peishuai Song ; Qing Liu ; An Ji ; Fuhua Yang ; Xiaodong Wang.(2018).Heavily Boron-Doped Silicon Layer for the Fabrication of Nanoscale Thermoelectric Devices.NANOMATERIALS,8(2),77.
MLA Zhe Ma ; Yang Liu ; Lingxiao Deng ; Mingliang Zhang ; Shuyuan Zhang ; Jing Ma ; Peishuai Song ; Qing Liu ; An Ji ; Fuhua Yang ; Xiaodong Wang."Heavily Boron-Doped Silicon Layer for the Fabrication of Nanoscale Thermoelectric Devices".NANOMATERIALS 8.2(2018):77.
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