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Enhancing oxidation rate of 4H–SiC by oxygen ion implantation
Min Liu;  Shuyuan Zhang;  Xiang Yang;  Xue Chen;  Zhongchao Fan;  Xiaodong Wang;  Fuhua Yang;  Chao Ma;  Zhi He
2018
Source PublicationJournal of Materials Science
Volume54Issue:2Pages:1147-1152
Indexed BySCI
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/29022
Collection半导体集成技术工程研究中心
Recommended Citation
GB/T 7714
Min Liu;Shuyuan Zhang;Xiang Yang;Xue Chen;Zhongchao Fan;Xiaodong Wang;Fuhua Yang;Chao Ma;Zhi He. Enhancing oxidation rate of 4H–SiC by oxygen ion implantation[J]. Journal of Materials Science,2018,54(2):1147-1152.
APA Min Liu;Shuyuan Zhang;Xiang Yang;Xue Chen;Zhongchao Fan;Xiaodong Wang;Fuhua Yang;Chao Ma;Zhi He.(2018).Enhancing oxidation rate of 4H–SiC by oxygen ion implantation.Journal of Materials Science,54(2),1147-1152.
MLA Min Liu;Shuyuan Zhang;Xiang Yang;Xue Chen;Zhongchao Fan;Xiaodong Wang;Fuhua Yang;Chao Ma;Zhi He."Enhancing oxidation rate of 4H–SiC by oxygen ion implantation".Journal of Materials Science 54.2(2018):1147-1152.
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