SEMI OpenIR  > 半导体超晶格国家重点实验室
Robust emergence of a topological Hall effect in MnGa/heavy metal bilayers
K. K. Meng;   X. P. Zhao;   P. F. Liu;   Q. Liu;   Y. Wu;   Z. P. Li;   J. K. Chen;   J. Miao;   X. G. Xu;   J. H. Zhao;   Y. Jiang
2018
Source PublicationPHYSICAL REVIEW B
Volume97Issue:6Pages:060407
Indexed BySCI
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/29005
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
K. K. Meng; X. P. Zhao; P. F. Liu; Q. Liu; Y. Wu; Z. P. Li; J. K. Chen; J. Miao; X. G. Xu; J. H. Zhao; Y. Jiang. Robust emergence of a topological Hall effect in MnGa/heavy metal bilayers[J]. PHYSICAL REVIEW B,2018,97(6):060407.
APA K. K. Meng; X. P. Zhao; P. F. Liu; Q. Liu; Y. Wu; Z. P. Li; J. K. Chen; J. Miao; X. G. Xu; J. H. Zhao; Y. Jiang.(2018).Robust emergence of a topological Hall effect in MnGa/heavy metal bilayers.PHYSICAL REVIEW B,97(6),060407.
MLA K. K. Meng; X. P. Zhao; P. F. Liu; Q. Liu; Y. Wu; Z. P. Li; J. K. Chen; J. Miao; X. G. Xu; J. H. Zhao; Y. Jiang."Robust emergence of a topological Hall effect in MnGa/heavy metal bilayers".PHYSICAL REVIEW B 97.6(2018):060407.
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