Knowledge Management System Of Institute of Semiconductors,CAS
Improving the electrical properties of InAs nanowire field effect transistors by covering them with Y 2 O 3 /HfO 2 layers | |
Tong Li ; Rui Shen; Mei Sun; Dong Pan; Jingmin Zhang; Jun Xu; Jianhua Zhao ; Qing Chen | |
2018 | |
Source Publication | NANOSCALE
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Volume | 10Issue:39Pages:18492–18501 |
Indexed By | SCI |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/28991 |
Collection | 半导体超晶格国家重点实验室 |
Recommended Citation GB/T 7714 | Tong Li ; Rui Shen; Mei Sun; Dong Pan; Jingmin Zhang; Jun Xu; Jianhua Zhao ; Qing Chen. Improving the electrical properties of InAs nanowire field effect transistors by covering them with Y 2 O 3 /HfO 2 layers[J]. NANOSCALE,2018,10(39):18492–18501. |
APA | Tong Li ; Rui Shen; Mei Sun; Dong Pan; Jingmin Zhang; Jun Xu; Jianhua Zhao ; Qing Chen.(2018).Improving the electrical properties of InAs nanowire field effect transistors by covering them with Y 2 O 3 /HfO 2 layers.NANOSCALE,10(39),18492–18501. |
MLA | Tong Li ; Rui Shen; Mei Sun; Dong Pan; Jingmin Zhang; Jun Xu; Jianhua Zhao ; Qing Chen."Improving the electrical properties of InAs nanowire field effect transistors by covering them with Y 2 O 3 /HfO 2 layers".NANOSCALE 10.39(2018):18492–18501. |
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File Name/Size | DocType | Version | Access | License | ||
Improving the electr(4036KB) | 期刊论文 | 作者接受稿 | 限制开放 | CC BY-NC-SA | Application Full Text |
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