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Improving the electrical properties of InAs nanowire field effect transistors by covering them with Y 2 O 3 /HfO 2 layers
Tong Li ;   Rui Shen;   Mei Sun;   Dong Pan;   Jingmin Zhang;   Jun Xu;   Jianhua Zhao ;   Qing Chen
2018
Source PublicationNANOSCALE
Volume10Issue:39Pages:18492–18501
Indexed BySCI
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/28991
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
Tong Li ; Rui Shen; Mei Sun; Dong Pan; Jingmin Zhang; Jun Xu; Jianhua Zhao ; Qing Chen. Improving the electrical properties of InAs nanowire field effect transistors by covering them with Y 2 O 3 /HfO 2 layers[J]. NANOSCALE,2018,10(39):18492–18501.
APA Tong Li ; Rui Shen; Mei Sun; Dong Pan; Jingmin Zhang; Jun Xu; Jianhua Zhao ; Qing Chen.(2018).Improving the electrical properties of InAs nanowire field effect transistors by covering them with Y 2 O 3 /HfO 2 layers.NANOSCALE,10(39),18492–18501.
MLA Tong Li ; Rui Shen; Mei Sun; Dong Pan; Jingmin Zhang; Jun Xu; Jianhua Zhao ; Qing Chen."Improving the electrical properties of InAs nanowire field effect transistors by covering them with Y 2 O 3 /HfO 2 layers".NANOSCALE 10.39(2018):18492–18501.
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