Improving the electrical properties of InAs nanowire field effect transistors by covering them with Y 2 O 3 /HfO 2 layers

	Improving the electrical properties of InAs nanowire field effect transistors by covering them with Y 2 O 3 /HfO 2 layers
	Tong Li ; Rui Shen; Mei Sun; Dong Pan; Jingmin Zhang; Jun Xu; Jianhua Zhao ; Qing Chen
	2018
Source Publication	NANOSCALE
Volume	10 Issue:39 Pages:18492–18501
Indexed By	SCI
Document Type	期刊论文
Identifier	http://ir.semi.ac.cn/handle/172111/28991
Collection	半导体超晶格国家重点实验室
Recommended Citation GB/T 7714	Tong Li ; Rui Shen; Mei Sun; Dong Pan; Jingmin Zhang; Jun Xu; Jianhua Zhao ; Qing Chen. Improving the electrical properties of InAs nanowire field effect transistors by covering them with Y 2 O 3 /HfO 2 layers[J]. NANOSCALE,2018,10(39):18492–18501.
APA	Tong Li ; Rui Shen; Mei Sun; Dong Pan; Jingmin Zhang; Jun Xu; Jianhua Zhao ; Qing Chen.(2018).Improving the electrical properties of InAs nanowire field effect transistors by covering them with Y 2 O 3 /HfO 2 layers.NANOSCALE,10(39),18492–18501.
MLA	Tong Li ; Rui Shen; Mei Sun; Dong Pan; Jingmin Zhang; Jun Xu; Jianhua Zhao ; Qing Chen."Improving the electrical properties of InAs nanowire field effect transistors by covering them with Y 2 O 3 /HfO 2 layers".NANOSCALE 10.39(2018):18492–18501.

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