SEMI OpenIR  > 半导体超晶格国家重点实验室
Improving Performances of In-Plane Transition-Metal Dichalcogenide Schottky Barrier Field-Effect Transistors
Zhi-Qiang Fan;   Xiang-Wei Jiang;  Jiezhi Chen;   Jun-Wei Luo
2018
Source PublicationACS Applied Materials & Interfaces
Volume10Issue:22Pages:19271-19277
Indexed BySCI
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/28990
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
Zhi-Qiang Fan; Xiang-Wei Jiang;Jiezhi Chen; Jun-Wei Luo. Improving Performances of In-Plane Transition-Metal Dichalcogenide Schottky Barrier Field-Effect Transistors[J]. ACS Applied Materials & Interfaces,2018,10(22):19271-19277.
APA Zhi-Qiang Fan; Xiang-Wei Jiang;Jiezhi Chen; Jun-Wei Luo.(2018).Improving Performances of In-Plane Transition-Metal Dichalcogenide Schottky Barrier Field-Effect Transistors.ACS Applied Materials & Interfaces,10(22),19271-19277.
MLA Zhi-Qiang Fan; Xiang-Wei Jiang;Jiezhi Chen; Jun-Wei Luo."Improving Performances of In-Plane Transition-Metal Dichalcogenide Schottky Barrier Field-Effect Transistors".ACS Applied Materials & Interfaces 10.22(2018):19271-19277.
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