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Quantum Hall Effect in Electron-Doped Black Phosphorus Field- Effect Transistors
Fangyuan Yang;   Zuocheng Zhang;   Nai Zhou Wang;   Guo Jun Ye;   Wenkai Lou;   Xiaoying Zhou;   Kenji Watanabe;   Takashi Taniguchi;   Kai Chang;   Xian Hui Chen;   Yuanbo Zhang
2018
Source PublicationNANO LETTERS
Volume18Issue:10Pages:6611-6616
Indexed BySCI
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/28982
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
Fangyuan Yang; Zuocheng Zhang; Nai Zhou Wang; Guo Jun Ye; Wenkai Lou; Xiaoying Zhou; Kenji Watanabe; Takashi Taniguchi; Kai Chang; Xian Hui Chen; Yuanbo Zhang. Quantum Hall Effect in Electron-Doped Black Phosphorus Field- Effect Transistors[J]. NANO LETTERS,2018,18(10):6611-6616.
APA Fangyuan Yang; Zuocheng Zhang; Nai Zhou Wang; Guo Jun Ye; Wenkai Lou; Xiaoying Zhou; Kenji Watanabe; Takashi Taniguchi; Kai Chang; Xian Hui Chen; Yuanbo Zhang.(2018).Quantum Hall Effect in Electron-Doped Black Phosphorus Field- Effect Transistors.NANO LETTERS,18(10),6611-6616.
MLA Fangyuan Yang; Zuocheng Zhang; Nai Zhou Wang; Guo Jun Ye; Wenkai Lou; Xiaoying Zhou; Kenji Watanabe; Takashi Taniguchi; Kai Chang; Xian Hui Chen; Yuanbo Zhang."Quantum Hall Effect in Electron-Doped Black Phosphorus Field- Effect Transistors".NANO LETTERS 18.10(2018):6611-6616.
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