Quantum Hall Effect in Electron-Doped Black Phosphorus Field- Effect Transistors

	Quantum Hall Effect in Electron-Doped Black Phosphorus Field- Effect Transistors
	Fangyuan Yang; Zuocheng Zhang; Nai Zhou Wang; Guo Jun Ye; Wenkai Lou; Xiaoying Zhou; Kenji Watanabe; Takashi Taniguchi; Kai Chang; Xian Hui Chen; Yuanbo Zhang
	2018
Source Publication	NANO LETTERS
Volume	18 Issue:10 Pages:6611-6616
Indexed By	SCI
Document Type	期刊论文
Identifier	http://ir.semi.ac.cn/handle/172111/28982
Collection	半导体超晶格国家重点实验室
Recommended Citation GB/T 7714	Fangyuan Yang; Zuocheng Zhang; Nai Zhou Wang; Guo Jun Ye; Wenkai Lou; Xiaoying Zhou; Kenji Watanabe; Takashi Taniguchi; Kai Chang; Xian Hui Chen; Yuanbo Zhang. Quantum Hall Effect in Electron-Doped Black Phosphorus Field- Effect Transistors[J]. NANO LETTERS,2018,18(10):6611-6616.
APA	Fangyuan Yang; Zuocheng Zhang; Nai Zhou Wang; Guo Jun Ye; Wenkai Lou; Xiaoying Zhou; Kenji Watanabe; Takashi Taniguchi; Kai Chang; Xian Hui Chen; Yuanbo Zhang.(2018).Quantum Hall Effect in Electron-Doped Black Phosphorus Field- Effect Transistors.NANO LETTERS,18(10),6611-6616.
MLA	Fangyuan Yang; Zuocheng Zhang; Nai Zhou Wang; Guo Jun Ye; Wenkai Lou; Xiaoying Zhou; Kenji Watanabe; Takashi Taniguchi; Kai Chang; Xian Hui Chen; Yuanbo Zhang."Quantum Hall Effect in Electron-Doped Black Phosphorus Field- Effect Transistors".NANO LETTERS 18.10(2018):6611-6616.

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