Knowledge Management System Of Institute of Semiconductors,CAS
Quantum Hall Effect in Electron-Doped Black Phosphorus Field- Effect Transistors | |
Fangyuan Yang; Zuocheng Zhang; Nai Zhou Wang; Guo Jun Ye; Wenkai Lou; Xiaoying Zhou; Kenji Watanabe; Takashi Taniguchi; Kai Chang; Xian Hui Chen; Yuanbo Zhang | |
2018 | |
Source Publication | NANO LETTERS
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Volume | 18Issue:10Pages:6611-6616 |
Indexed By | SCI |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/28982 |
Collection | 半导体超晶格国家重点实验室 |
Recommended Citation GB/T 7714 | Fangyuan Yang; Zuocheng Zhang; Nai Zhou Wang; Guo Jun Ye; Wenkai Lou; Xiaoying Zhou; Kenji Watanabe; Takashi Taniguchi; Kai Chang; Xian Hui Chen; Yuanbo Zhang. Quantum Hall Effect in Electron-Doped Black Phosphorus Field- Effect Transistors[J]. NANO LETTERS,2018,18(10):6611-6616. |
APA | Fangyuan Yang; Zuocheng Zhang; Nai Zhou Wang; Guo Jun Ye; Wenkai Lou; Xiaoying Zhou; Kenji Watanabe; Takashi Taniguchi; Kai Chang; Xian Hui Chen; Yuanbo Zhang.(2018).Quantum Hall Effect in Electron-Doped Black Phosphorus Field- Effect Transistors.NANO LETTERS,18(10),6611-6616. |
MLA | Fangyuan Yang; Zuocheng Zhang; Nai Zhou Wang; Guo Jun Ye; Wenkai Lou; Xiaoying Zhou; Kenji Watanabe; Takashi Taniguchi; Kai Chang; Xian Hui Chen; Yuanbo Zhang."Quantum Hall Effect in Electron-Doped Black Phosphorus Field- Effect Transistors".NANO LETTERS 18.10(2018):6611-6616. |
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File Name/Size | DocType | Version | Access | License | ||
Quantum Hall Effect (1409KB) | 期刊论文 | 作者接受稿 | 限制开放 | CC BY-NC-SA | Application Full Text |
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