SEMI OpenIR  > 半导体超晶格国家重点实验室
Anomalously large resistance at the charge neutrality point in a zero-gap InAs_GaSb bilayer
WYu ;  VClericò ;  CHernándezFuentevilla ;  XShi ;  YJiang ;  DSaha ;  WKLou ;  KChang ;  DHHuang ;   GGumbs ;  DSmirnov ;  CJStanton ;  ZJiang ;  VBellani ;  YMeziani ;  EDiez ;  WPan ;   SDHawkins ;  JFKlem
2018
Source PublicationNEW JOURNAL OF PHYSICS
Volume20Pages:053062
Indexed BySCI
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/28972
Collection半导体超晶格国家重点实验室
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GB/T 7714
WYu ;VClericò ;CHernándezFuentevilla ;XShi ;YJiang ;DSaha ;WKLou ;KChang ;DHHuang ; GGumbs ;DSmirnov ;CJStanton ;ZJiang ;VBellani ;YMeziani ;EDiez ;WPan ; SDHawkins ;JFKlem. Anomalously large resistance at the charge neutrality point in a zero-gap InAs_GaSb bilayer[J]. NEW JOURNAL OF PHYSICS,2018,20:053062.
APA WYu ;VClericò ;CHernándezFuentevilla ;XShi ;YJiang ;DSaha ;WKLou ;KChang ;DHHuang ; GGumbs ;DSmirnov ;CJStanton ;ZJiang ;VBellani ;YMeziani ;EDiez ;WPan ; SDHawkins ;JFKlem.(2018).Anomalously large resistance at the charge neutrality point in a zero-gap InAs_GaSb bilayer.NEW JOURNAL OF PHYSICS,20,053062.
MLA WYu ;VClericò ;CHernándezFuentevilla ;XShi ;YJiang ;DSaha ;WKLou ;KChang ;DHHuang ; GGumbs ;DSmirnov ;CJStanton ;ZJiang ;VBellani ;YMeziani ;EDiez ;WPan ; SDHawkins ;JFKlem."Anomalously large resistance at the charge neutrality point in a zero-gap InAs_GaSb bilayer".NEW JOURNAL OF PHYSICS 20(2018):053062.
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