SEMI OpenIR  > 中科院半导体材料科学重点实验室
Improved performance of 1.3-mu m InAs-GaAs quantum dot lasers by direct Si doping
Zun-Ren Lv;   Zhong-Kai Zhang;   Xiao-Guang Yang;   Tao Yang
2018
Source PublicationAPPLIED PHYSICS LETTERS
Volume113Pages:011105
Indexed BySCI
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/28959
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Zun-Ren Lv; Zhong-Kai Zhang; Xiao-Guang Yang; Tao Yang. Improved performance of 1.3-mu m InAs-GaAs quantum dot lasers by direct Si doping[J]. APPLIED PHYSICS LETTERS,2018,113:011105.
APA Zun-Ren Lv; Zhong-Kai Zhang; Xiao-Guang Yang; Tao Yang.(2018).Improved performance of 1.3-mu m InAs-GaAs quantum dot lasers by direct Si doping.APPLIED PHYSICS LETTERS,113,011105.
MLA Zun-Ren Lv; Zhong-Kai Zhang; Xiao-Guang Yang; Tao Yang."Improved performance of 1.3-mu m InAs-GaAs quantum dot lasers by direct Si doping".APPLIED PHYSICS LETTERS 113(2018):011105.
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