Knowledge Management System Of Institute of Semiconductors,CAS
Gate-tunable and high optoelectronic performance in multilayer WSe 2 P–N diode | |
Yujue Yang; Nengjie Huo; Jingbo Li | |
2018 | |
Source Publication | Journal Of Materials Chemistry C
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Volume | 6Issue:43Pages:11673-11678 |
Indexed By | SCI |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/28915 |
Collection | 半导体超晶格国家重点实验室 |
Recommended Citation GB/T 7714 | Yujue Yang;Nengjie Huo;Jingbo Li. Gate-tunable and high optoelectronic performance in multilayer WSe 2 P–N diode[J]. Journal Of Materials Chemistry C,2018,6(43):11673-11678. |
APA | Yujue Yang;Nengjie Huo;Jingbo Li.(2018).Gate-tunable and high optoelectronic performance in multilayer WSe 2 P–N diode.Journal Of Materials Chemistry C,6(43),11673-11678. |
MLA | Yujue Yang;Nengjie Huo;Jingbo Li."Gate-tunable and high optoelectronic performance in multilayer WSe 2 P–N diode".Journal Of Materials Chemistry C 6.43(2018):11673-11678. |
Files in This Item: | ||||||
File Name/Size | DocType | Version | Access | License | ||
Gate-tunable and hig(2363KB) | 期刊论文 | 作者接受稿 | 限制开放 | CC BY-NC-SA | Application Full Text |
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