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Gate-tunable and high optoelectronic performance in multilayer WSe 2 P–N diode
Yujue Yang;  Nengjie Huo;  Jingbo Li
2018
Source PublicationJournal Of Materials Chemistry C
Volume6Issue:43Pages:11673-11678
Indexed BySCI
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/28915
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
Yujue Yang;Nengjie Huo;Jingbo Li. Gate-tunable and high optoelectronic performance in multilayer WSe 2 P–N diode[J]. Journal Of Materials Chemistry C,2018,6(43):11673-11678.
APA Yujue Yang;Nengjie Huo;Jingbo Li.(2018).Gate-tunable and high optoelectronic performance in multilayer WSe 2 P–N diode.Journal Of Materials Chemistry C,6(43),11673-11678.
MLA Yujue Yang;Nengjie Huo;Jingbo Li."Gate-tunable and high optoelectronic performance in multilayer WSe 2 P–N diode".Journal Of Materials Chemistry C 6.43(2018):11673-11678.
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