Gate-tunable and high optoelectronic performance in multilayer WSe 2 P–N diode

	Gate-tunable and high optoelectronic performance in multilayer WSe 2 P–N diode
	Yujue Yang; Nengjie Huo; Jingbo Li
	2018
Source Publication	Journal Of Materials Chemistry C
Volume	6 Issue:43 Pages:11673-11678
Indexed By	SCI
Document Type	期刊论文
Identifier	http://ir.semi.ac.cn/handle/172111/28915
Collection	半导体超晶格国家重点实验室
Recommended Citation GB/T 7714	Yujue Yang;Nengjie Huo;Jingbo Li. Gate-tunable and high optoelectronic performance in multilayer WSe 2 P–N diode[J]. Journal Of Materials Chemistry C,2018,6(43):11673-11678.
APA	Yujue Yang;Nengjie Huo;Jingbo Li.(2018).Gate-tunable and high optoelectronic performance in multilayer WSe 2 P–N diode.Journal Of Materials Chemistry C,6(43),11673-11678.
MLA	Yujue Yang;Nengjie Huo;Jingbo Li."Gate-tunable and high optoelectronic performance in multilayer WSe 2 P–N diode".Journal Of Materials Chemistry C 6.43(2018):11673-11678.

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