SEMI OpenIR  > 中科院半导体照明研发中心
Direct Growth of 5 in. Uniform Hexagonal Boron Nitride on Glass for High-Performance Deep-Ultraviolet Light-Emitting Diodes
Qiucheng Li;   Qingqing Wu;   Jing Gao;   Tongbo Wei;   Jingyu Sun;   Hao Hong;   Zhipeng Dou;   Zhepeng Zhang;   Mark H. Rümmeli;   Peng Gao;   Jianchang Yan;   Junxi Wang;   Jinmin Li;   Yanfeng Zhang;   Zhongfan Liu
2018
Source PublicationAdvanced Materials Interfaces
Volume5Issue:18Pages:1800662
Indexed BySCI
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/28912
Collection中科院半导体照明研发中心
Recommended Citation
GB/T 7714
Qiucheng Li; Qingqing Wu; Jing Gao; Tongbo Wei; Jingyu Sun; Hao Hong; Zhipeng Dou; Zhepeng Zhang; Mark H. Rümmeli; Peng Gao; Jianchang Yan; Junxi Wang; Jinmin Li; Yanfeng Zhang; Zhongfan Liu. Direct Growth of 5 in. Uniform Hexagonal Boron Nitride on Glass for High-Performance Deep-Ultraviolet Light-Emitting Diodes[J]. Advanced Materials Interfaces,2018,5(18):1800662.
APA Qiucheng Li; Qingqing Wu; Jing Gao; Tongbo Wei; Jingyu Sun; Hao Hong; Zhipeng Dou; Zhepeng Zhang; Mark H. Rümmeli; Peng Gao; Jianchang Yan; Junxi Wang; Jinmin Li; Yanfeng Zhang; Zhongfan Liu.(2018).Direct Growth of 5 in. Uniform Hexagonal Boron Nitride on Glass for High-Performance Deep-Ultraviolet Light-Emitting Diodes.Advanced Materials Interfaces,5(18),1800662.
MLA Qiucheng Li; Qingqing Wu; Jing Gao; Tongbo Wei; Jingyu Sun; Hao Hong; Zhipeng Dou; Zhepeng Zhang; Mark H. Rümmeli; Peng Gao; Jianchang Yan; Junxi Wang; Jinmin Li; Yanfeng Zhang; Zhongfan Liu."Direct Growth of 5 in. Uniform Hexagonal Boron Nitride on Glass for High-Performance Deep-Ultraviolet Light-Emitting Diodes".Advanced Materials Interfaces 5.18(2018):1800662.
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吴清清Direct Growth of (2581KB)期刊论文作者接受稿限制开放CC BY-NC-SAApplication Full Text
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