| Direct Growth of 5 in. Uniform Hexagonal Boron Nitride on Glass for High-Performance Deep-Ultraviolet Light-Emitting Diodes | |
| Qiucheng Li; Qingqing Wu; Jing Gao; Tongbo Wei; Jingyu Sun; Hao Hong; Zhipeng Dou; Zhepeng Zhang; Mark H. Rümmeli; Peng Gao; Jianchang Yan; Junxi Wang; Jinmin Li; Yanfeng Zhang; Zhongfan Liu | |
| 2018 | |
| Source Publication | Advanced Materials Interfaces
 |
| Volume | 5Issue:18Pages:1800662 |
| Indexed By | SCI |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/28912 |
| Collection | 中科院半导体照明研发中心 |
| Recommended Citation GB/T 7714 | Qiucheng Li; Qingqing Wu; Jing Gao; Tongbo Wei; Jingyu Sun; Hao Hong; Zhipeng Dou; Zhepeng Zhang; Mark H. Rümmeli; Peng Gao; Jianchang Yan; Junxi Wang; Jinmin Li; Yanfeng Zhang; Zhongfan Liu. Direct Growth of 5 in. Uniform Hexagonal Boron Nitride on Glass for High-Performance Deep-Ultraviolet Light-Emitting Diodes[J]. Advanced Materials Interfaces,2018,5(18):1800662. |
| APA | Qiucheng Li; Qingqing Wu; Jing Gao; Tongbo Wei; Jingyu Sun; Hao Hong; Zhipeng Dou; Zhepeng Zhang; Mark H. Rümmeli; Peng Gao; Jianchang Yan; Junxi Wang; Jinmin Li; Yanfeng Zhang; Zhongfan Liu.(2018).Direct Growth of 5 in. Uniform Hexagonal Boron Nitride on Glass for High-Performance Deep-Ultraviolet Light-Emitting Diodes.Advanced Materials Interfaces,5(18),1800662. |
| MLA | Qiucheng Li; Qingqing Wu; Jing Gao; Tongbo Wei; Jingyu Sun; Hao Hong; Zhipeng Dou; Zhepeng Zhang; Mark H. Rümmeli; Peng Gao; Jianchang Yan; Junxi Wang; Jinmin Li; Yanfeng Zhang; Zhongfan Liu."Direct Growth of 5 in. Uniform Hexagonal Boron Nitride on Glass for High-Performance Deep-Ultraviolet Light-Emitting Diodes".Advanced Materials Interfaces 5.18(2018):1800662. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| 吴清清Direct Growth of （2581KB） | 期刊论文 | 作者接受稿 | 限制开放 | CC BY-NC-SA | Application Full Text | |
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