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Narrow-gap physical vapour deposition synthesis of ultrathin SnS 1−x Se x (0 ≤ x ≤ 1) two-dimensional alloys with unique polarized Raman spectra and high (opto)electronic properties
Wei Gao;  Yongtao Li;  Jianhua Guo;  Muxun Ni;  Ming Liao;  Haojie Mo;  Jingbo Li
2018
Source PublicationNanoscale
Volume10Issue:8Pages:8787-8795
Indexed BySCI
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/28878
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
Wei Gao;Yongtao Li;Jianhua Guo;Muxun Ni;Ming Liao;Haojie Mo;Jingbo Li. Narrow-gap physical vapour deposition synthesis of ultrathin SnS 1−x Se x (0 ≤ x ≤ 1) two-dimensional alloys with unique polarized Raman spectra and high (opto)electronic properties[J]. Nanoscale,2018,10(8):8787-8795.
APA Wei Gao;Yongtao Li;Jianhua Guo;Muxun Ni;Ming Liao;Haojie Mo;Jingbo Li.(2018).Narrow-gap physical vapour deposition synthesis of ultrathin SnS 1−x Se x (0 ≤ x ≤ 1) two-dimensional alloys with unique polarized Raman spectra and high (opto)electronic properties.Nanoscale,10(8),8787-8795.
MLA Wei Gao;Yongtao Li;Jianhua Guo;Muxun Ni;Ming Liao;Haojie Mo;Jingbo Li."Narrow-gap physical vapour deposition synthesis of ultrathin SnS 1−x Se x (0 ≤ x ≤ 1) two-dimensional alloys with unique polarized Raman spectra and high (opto)electronic properties".Nanoscale 10.8(2018):8787-8795.
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