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| Narrow-gap physical vapour deposition synthesis of ultrathin SnS 1−x Se x (0 ≤ x ≤ 1) two-dimensional alloys with unique polarized Raman spectra and high (opto)electronic properties | |
| Wei Gao; Yongtao Li; Jianhua Guo; Muxun Ni; Ming Liao; Haojie Mo; Jingbo Li | |
| 2018 | |
| Source Publication | Nanoscale
 |
| Volume | 10Issue:8Pages:8787-8795 |
| Indexed By | SCI |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/28878 |
| Collection | 半导体超晶格国家重点实验室 |
| Recommended Citation GB/T 7714 | Wei Gao;Yongtao Li;Jianhua Guo;Muxun Ni;Ming Liao;Haojie Mo;Jingbo Li. Narrow-gap physical vapour deposition synthesis of ultrathin SnS 1−x Se x (0 ≤ x ≤ 1) two-dimensional alloys with unique polarized Raman spectra and high (opto)electronic properties[J]. Nanoscale,2018,10(8):8787-8795. |
| APA | Wei Gao;Yongtao Li;Jianhua Guo;Muxun Ni;Ming Liao;Haojie Mo;Jingbo Li.(2018).Narrow-gap physical vapour deposition synthesis of ultrathin SnS 1−x Se x (0 ≤ x ≤ 1) two-dimensional alloys with unique polarized Raman spectra and high (opto)electronic properties.Nanoscale,10(8),8787-8795. |
| MLA | Wei Gao;Yongtao Li;Jianhua Guo;Muxun Ni;Ming Liao;Haojie Mo;Jingbo Li."Narrow-gap physical vapour deposition synthesis of ultrathin SnS 1−x Se x (0 ≤ x ≤ 1) two-dimensional alloys with unique polarized Raman spectra and high (opto)electronic properties".Nanoscale 10.8(2018):8787-8795. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| Narrow-gap physical （576KB） | 期刊论文 | 作者接受稿 | 限制开放 | CC BY-NC-SA | Application Full Text | |
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