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A self-consistent numerical approach for characterizing the band structures and gain spectrum of tensile-strained and n+-doped Ge/GeSi quantum wells
Yu Jiang; Yun Xu; Haoyue Wu; Jian Li; Lin Bai; Huamin Chen; Jiushuang Zhang; Guofeng Song
2017
Source PublicationJournal of Physics D: Applied Physics
Volume50Issue:2017Pages:475104 (9pp)
Subject Area光电子学
Indexed BySCI
Date Available2018-11-30
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/28815
Collection光电子研究发展中心
Recommended Citation
GB/T 7714
Yu Jiang,Yun Xu,Haoyue Wu,et al. A self-consistent numerical approach for characterizing the band structures and gain spectrum of tensile-strained and n+-doped Ge/GeSi quantum wells[J]. Journal of Physics D: Applied Physics,2017,50(2017):475104 (9pp).
APA Yu Jiang.,Yun Xu.,Haoyue Wu.,Jian Li.,Lin Bai.,...&Guofeng Song.(2017).A self-consistent numerical approach for characterizing the band structures and gain spectrum of tensile-strained and n+-doped Ge/GeSi quantum wells.Journal of Physics D: Applied Physics,50(2017),475104 (9pp).
MLA Yu Jiang,et al."A self-consistent numerical approach for characterizing the band structures and gain spectrum of tensile-strained and n+-doped Ge/GeSi quantum wells".Journal of Physics D: Applied Physics 50.2017(2017):475104 (9pp).
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