| The property optimization of n-GaN films grown on n-SiC substrates by incorporating a SiNx interlayer | |
| Shuang Cui; Yuantao Zhang; Zhen Huang; Gaoqiang Deng; Baozhu Li; Degang Zhao; Yuchun Chang | |
| 2017 | |
| Source Publication | J Mater Sci: Mater Electron
 |
| Volume | 28Pages:6008–6014 |
| Subject Area | 光电子学 |
| Indexed By | SCI |
| Date Available | 2018-11-30 |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/28790 |
| Collection | 光电子研究发展中心 |
| Recommended Citation GB/T 7714 | Shuang Cui,Yuantao Zhang,Zhen Huang,et al. The property optimization of n-GaN films grown on n-SiC substrates by incorporating a SiNx interlayer[J]. J Mater Sci: Mater Electron,2017,28:6008–6014. |
| APA | Shuang Cui.,Yuantao Zhang.,Zhen Huang.,Gaoqiang Deng.,Baozhu Li.,...&Yuchun Chang.(2017).The property optimization of n-GaN films grown on n-SiC substrates by incorporating a SiNx interlayer.J Mater Sci: Mater Electron,28,6008–6014. |
| MLA | Shuang Cui,et al."The property optimization of n-GaN films grown on n-SiC substrates by incorporating a SiNx interlayer".J Mater Sci: Mater Electron 28(2017):6008–6014. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| The property optimiz（2398KB） | 限制开放 | License | Application Full Text | |||
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