The property optimization of n-GaN films grown on n-SiC substrates by incorporating a SiNx interlayer | |
Shuang Cui; Yuantao Zhang; Zhen Huang; Gaoqiang Deng; Baozhu Li; Degang Zhao; Yuchun Chang | |
2017 | |
Source Publication | J Mater Sci: Mater Electron
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Volume | 28Pages:6008–6014 |
Subject Area | 光电子学 |
Indexed By | SCI |
Date Available | 2018-11-30 |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/28790 |
Collection | 光电子研究发展中心 |
Recommended Citation GB/T 7714 | Shuang Cui,Yuantao Zhang,Zhen Huang,et al. The property optimization of n-GaN films grown on n-SiC substrates by incorporating a SiNx interlayer[J]. J Mater Sci: Mater Electron,2017,28:6008–6014. |
APA | Shuang Cui.,Yuantao Zhang.,Zhen Huang.,Gaoqiang Deng.,Baozhu Li.,...&Yuchun Chang.(2017).The property optimization of n-GaN films grown on n-SiC substrates by incorporating a SiNx interlayer.J Mater Sci: Mater Electron,28,6008–6014. |
MLA | Shuang Cui,et al."The property optimization of n-GaN films grown on n-SiC substrates by incorporating a SiNx interlayer".J Mater Sci: Mater Electron 28(2017):6008–6014. |
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