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The property optimization of n-GaN films grown on n-SiC substrates by incorporating a SiNx interlayer
Shuang Cui; Yuantao Zhang; Zhen Huang; Gaoqiang Deng; Baozhu Li; Degang Zhao; Yuchun Chang
2017
Source PublicationJ Mater Sci: Mater Electron
Volume28Pages:6008–6014
Subject Area光电子学
Indexed BySCI
Date Available2018-11-30
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/28790
Collection光电子研究发展中心
Recommended Citation
GB/T 7714
Shuang Cui,Yuantao Zhang,Zhen Huang,et al. The property optimization of n-GaN films grown on n-SiC substrates by incorporating a SiNx interlayer[J]. J Mater Sci: Mater Electron,2017,28:6008–6014.
APA Shuang Cui.,Yuantao Zhang.,Zhen Huang.,Gaoqiang Deng.,Baozhu Li.,...&Yuchun Chang.(2017).The property optimization of n-GaN films grown on n-SiC substrates by incorporating a SiNx interlayer.J Mater Sci: Mater Electron,28,6008–6014.
MLA Shuang Cui,et al."The property optimization of n-GaN films grown on n-SiC substrates by incorporating a SiNx interlayer".J Mater Sci: Mater Electron 28(2017):6008–6014.
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