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The growth optimization and mechanism of N-polar GaN films with an in situ porous SiNx interlayer
Gaoqiang Deng; Yuantao Zhang; Zhen Huang; Long Yan; Pengchong Li; Xu Han; Ye Yu; Liang Chen; Degang Zhaoand Guotong Du
2017
Source PublicationCrystEngComm
Volume19Pages:4330–4337
Subject Area光电子学
Indexed BySCI
Date Available2018-11-30
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/28789
Collection光电子研究发展中心
Recommended Citation
GB/T 7714
Gaoqiang Deng,Yuantao Zhang,Zhen Huang,et al. The growth optimization and mechanism of N-polar GaN films with an in situ porous SiNx interlayer[J]. CrystEngComm,2017,19:4330–4337.
APA Gaoqiang Deng.,Yuantao Zhang.,Zhen Huang.,Long Yan.,Pengchong Li.,...&Degang Zhaoand Guotong Du.(2017).The growth optimization and mechanism of N-polar GaN films with an in situ porous SiNx interlayer.CrystEngComm,19,4330–4337.
MLA Gaoqiang Deng,et al."The growth optimization and mechanism of N-polar GaN films with an in situ porous SiNx interlayer".CrystEngComm 19(2017):4330–4337.
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