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Investigation on the corrosive effect of NH3 during InGaN/GaN multi-quantum well growth in light emitting diodes
J. Yang; D. G. Zhao; D. S. Jiang; P. Chen; J. J. Zhu; Z. S. Liu; W. Liu; X. Li; F. Liang; S. T. Liu; L. Q. Zhang; H. Yang
2017
Source PublicationScientific Reports
Volume7Pages:44850
Subject Area光电子学
Indexed BySCI
Date Available2018-11-30
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/28788
Collection光电子研究发展中心
Recommended Citation
GB/T 7714
J. Yang,D. G. Zhao,D. S. Jiang,et al. Investigation on the corrosive effect of NH3 during InGaN/GaN multi-quantum well growth in light emitting diodes[J]. Scientific Reports,2017,7:44850.
APA J. Yang.,D. G. Zhao.,D. S. Jiang.,P. Chen.,J. J. Zhu.,...&H. Yang.(2017).Investigation on the corrosive effect of NH3 during InGaN/GaN multi-quantum well growth in light emitting diodes.Scientific Reports,7,44850.
MLA J. Yang,et al."Investigation on the corrosive effect of NH3 during InGaN/GaN multi-quantum well growth in light emitting diodes".Scientific Reports 7(2017):44850.
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