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Increasing the indium incorporation efficiency during InGaN layer growth by suppressing the dissociation of NH3
J. Yang; D.G. Zhao; D.S. Jiang; P. Chen; J.J. Zhu; Z.S. Liu; W. Liu; F. Liang; X. Li; S.T. Liu; L.Q. Zhang; H. Yang
2017
Source PublicationSuperlattices and Microstructures
Volume102Issue:2017Pages:35-39
Subject Area光电子学
Indexed BySCI
Date Available2018-11-30
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/28787
Collection光电子研究发展中心
Recommended Citation
GB/T 7714
J. Yang,D.G. Zhao,D.S. Jiang,et al. Increasing the indium incorporation efficiency during InGaN layer growth by suppressing the dissociation of NH3[J]. Superlattices and Microstructures,2017,102(2017):35-39.
APA J. Yang.,D.G. Zhao.,D.S. Jiang.,P. Chen.,J.J. Zhu.,...&H. Yang.(2017).Increasing the indium incorporation efficiency during InGaN layer growth by suppressing the dissociation of NH3.Superlattices and Microstructures,102(2017),35-39.
MLA J. Yang,et al."Increasing the indium incorporation efficiency during InGaN layer growth by suppressing the dissociation of NH3".Superlattices and Microstructures 102.2017(2017):35-39.
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