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Performance of InGaN based green laser diodes improved by using an asymmetric InGaN/InGaN multi-quantum well active region
J. YANG; D. G. ZHAO; D. S. JIANG; X. LI; F. LIANG; P. CHEN; J. J. ZHU; Z. S. LIU; S. T. LIU; L. Q. ZHANG; M. LI
2017
Source PublicationOPTICS EXPRESS
Volume25Issue:9Pages:9595-9602
Subject Area光电子学
Indexed BySCI
Date Available2018-11-30
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/28786
Collection光电子研究发展中心
Recommended Citation
GB/T 7714
J. YANG,D. G. ZHAO,D. S. JIANG,et al. Performance of InGaN based green laser diodes improved by using an asymmetric InGaN/InGaN multi-quantum well active region[J]. OPTICS EXPRESS,2017,25(9):9595-9602.
APA J. YANG.,D. G. ZHAO.,D. S. JIANG.,X. LI.,F. LIANG.,...&M. LI.(2017).Performance of InGaN based green laser diodes improved by using an asymmetric InGaN/InGaN multi-quantum well active region.OPTICS EXPRESS,25(9),9595-9602.
MLA J. YANG,et al."Performance of InGaN based green laser diodes improved by using an asymmetric InGaN/InGaN multi-quantum well active region".OPTICS EXPRESS 25.9(2017):9595-9602.
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